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Showing items 604416-604425 of 2348487 (234849 Page(s) Totally)
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| 國立成功大學 |
2002-02-15 |
n(+)-GaN formed by Si implantation into p-GaN
|
Sheu, Jinn-Kung; Tun, Chun-Ju; Tsai, M. S.; Lee, Cheng-Chung; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2016-10 |
n(+)-Microcrystalline-Silicon Tunnel Layer in Tandem Si-Based Thin Film Solar Cells
|
Lee, Ching-Ting; Lee, Hsin-Ying; Chen, Kuan-Hao |
| 臺大學術典藏 |
2018-09-10T07:21:38Z |
N(α) acetylation is required for normal growth and mating of Saccharomyces cerevisiae
|
Lee, F.-J.S.;Lin, L.-W.;Smith, J.A.; FANG-JEN LEE |
| 臺大學術典藏 |
2021-07-02T07:28:08Z |
N(α) acetylation is required for normal growth and mating of Saccharomyces cerevisiae
|
Fang-Jen Scott Lee; Lin L.-W.; Smith J.A. |
| 國立中山大學 |
2007 |
N+-doped-layer free microcrystalline silicon thin-film transistor fabricated with the CuMg as source/drain metal
|
M.C. Wang;T.C. Chang;P.T. Liu;R.W. Xiao;L.F. Lin;Y.Y. Li;J.R. Chen |
| 國立東華大學 |
2006 |
n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors
|
Lin,Y. S.; Huang,D. H.; Wu,Y. H.; Hsu,R. T.; Wang,T. B.; Hsu,W. C. |
| 國立東華大學 |
2006-08 |
n+-GaAs/p+-InAlGaP/n-InAlGaP camel-gate high-electron mobility transistors grown by MOCVD
|
Lin,Y. S.; Huang,D. H.; Hsu, W. C.; Hsu,R. T.; Wu,Y. H. |
| 國立交通大學 |
2015-11-26T01:02:32Z |
N+-P鍺淺接面暨接觸電阻研究
|
周鴻儒; Chou, Hung-Ju; 崔秉鉞; Tsui, Bing-Yue |
| 國立交通大學 |
2017-10-06T06:22:54Z |
n+1個變數的廣義超幾何函數
|
M.A.Pathan |
| 國立交通大學 |
2014-12-12T02:09:28Z |
N+複晶矽閘極MDS電容經輻射後的研究
|
康宗貴; KANG, ZONG-GUI; 鄭晃忠; ZHENG, HUANG-ZHONG |
Showing items 604416-604425 of 2348487 (234849 Page(s) Totally)
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