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Showing items 615151-615175 of 2348927 (93958 Page(s) Totally)
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| 國立成功大學 |
2004-10 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2005-09 |
Nitride-Based LEDs With MQW Active Regions Grown by Different Temperature Profiles
|
Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Chen, Shi-Ming; Li, W. L. |
| 國立成功大學 |
2005-12 |
Nitride-based LEDs with n(-)-GaN current spreading layers
|
Su, Yan-Kuin; Li, W. L.; Chen, S. M.; Chuang, R. W.; Wei, S. C.; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:16:20Z |
Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
|
Huang, HW; Kuo, HC; Chu, JT; Lai, CF; Kao, CC; Lu, TC; Wang, SC; Tsai, RJ; Yu, CC; Lin, CF |
| 國立成功大學 |
2003-12 |
Nitride-based LEDs with p-InGaN capping layer
|
Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran |
| 實踐大學 |
2009 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
|
Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C. |
| 國立成功大學 |
2009-04-15 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
|
Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C. |
| 國立成功大學 |
2003 |
Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer
|
Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M. |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
|
Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2005-08 |
Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
|
Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
|
Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-02 |
Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
|
Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 南台科技大學 |
2006-12 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
|
C. F. Shen; S. J. Chang; T. K. Ko; C. T. Kuo; S. C. Shei; W. S. Chen; C. T. Lee; C. S. Chang;Y. Z. Chiou |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
|
Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
| 國立成功大學 |
2008-05-01 |
Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures
|
Ji, L. W.; Young, Sheng-Joue; Liu, C. H.; Water, W.; Meen, Teen-Hang; Jywe, W. Y. |
| 臺大學術典藏 |
2022-05-24T06:26:44Z |
Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures
|
Ji L.W.;Young S.J.;Liu C.H.;Water W.;Meen T.H.;Jywe W.Y.; Ji L.W.; Young S.J.; Liu C.H.; Water W.; Meen T.H.; Jywe W.Y.; Wen-Yuh Jywe |
| 國立成功大學 |
2004-12 |
Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers
|
Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, S. C.; Chang, C. S.; Wu, L. W. |
| 國立成功大學 |
2002-12 |
Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts
|
Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran |
| 國立成功大學 |
2005-10 |
Nitride-based light-emitting diodes with p-AlInGaN surface layers
|
Kuo, Chih-Hung; Lin, C. C.; Chang, Shoou-Jinn; Hsu, Y. P.; Tsai, J. M.; Lai, W. C.; Wang, P. T. |
| 國立成功大學 |
2009-07 |
Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition oxide and (NH4)(2)S-x pretreatment prepared on sapphire substrates
|
Lan, C. H.; Hwang, J. D.; Chang, Shoou-Jinn; Lin, Y. C.; Cheng, Y. C.; Lin, Web-Jen; Lin, J. C.; Chang, K. J. |
| 國立成功大學 |
2006-10 |
Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers
|
Chang, Shoou-Jinn; Yu, C. L.; Chang, Ping-Chuan; Lin, Y. C.; Chen, Chin-Hsiang |
| 國立成功大學 |
2006-10 |
Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers
|
Chang, Shoou-Jinn; Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Ping-Chuan; Lin, Y. C.; Jhan, Y. W.; Chen, C. H. |
| 國立成功大學 |
2005-06 |
Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers
|
Wei, Sun-Chin; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, Shi-Ming; Li, W. L. |
| 國立成功大學 |
2008 |
Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer
|
Lee, K. H.; Chuang, Ricky W.; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wang, Y. C.; Yu, C. L.; Lin, J. C.; Wud, S. L. |
| 國立成功大學 |
2005-03 |
Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts
|
Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Yu, Chia-Lin; Lee, Ching-Ting; Lee, H. Y.; Gong, J.; Chen, Po-Chang; Wang, C. H. |
Showing items 615151-615175 of 2348927 (93958 Page(s) Totally)
<< < 24602 24603 24604 24605 24606 24607 24608 24609 24610 24611 > >>
View [10|25|50] records per page
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