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Showing items 615171-615195 of 2349067 (93963 Page(s) Totally)
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| 國立成功大學 |
2003-07-15 |
Nitride-based HFETs with carrier confinement layers
|
Su, Yan-Kuin; Chang, Shoou-Jinn; Kuan, T. M.; Ko, C. H.; Webb, J. B.; Lan, W. H.; Cherng, Ya-Tung; Chen, S. C. |
| 國立成功大學 |
2007-05-15 |
Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate
|
Shen, C. F.; Chang, Shoou-Jinn; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang |
| 國立成功大學 |
2003-09 |
Nitride-based LEDs fabricated on patterned sapphire substrates
|
Chang, Shoou-Jinn; Lin, Y. C.; Su, Yan-Kuin; Chang, C. S.; Wen, Ten-Chin; Shei, Shih-Chang; Ke, J. C.; Kuo, C. W.; Chen, S. C.; Liu, C. H. |
| 國立臺灣科技大學 |
2012 |
Nitride-based LEDs fabricated on ZnO-buffered sapphire substrates
|
Huang, J.-B.;Nguyen, N.G.;Chou, C.-H.;Wei, S.-S.;Hong, L.-S. |
| 國立成功大學 |
2004 |
Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers
|
Chang, S. J.; Wu, L. W.; Su, Y. K.; Hsu, Y. P.; Lai, W. C.; Tsai, J. A.; �Sheu,� Jinn-Kong; Lee C.T |
| 國立成功大學 |
2008-09 |
Nitride-Based LEDs With a Hybrid Al Mirror +TiO2/SiO2 DBR Backside Reflector
|
Chang, Shoou-Jinn; Shen, C. F.; Hsieh, M. H.; Kuo, C. T.; Ko, T. K.; Chen, W. S.; Shei, Shih-Chang |
| 南台科技大學 |
2007-03 |
Nitride-Based LEDs with an Insulating SiO2 Layer Underneath p-Pad Electrodes
|
S. J. Chang; C. F. Shen; W. S. Chen; T. K. Ko; C. T. Kuo; K. H. Yu; S. C. Shei; Y. Z. Chiou |
| 國立成功大學 |
2007 |
Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes
|
Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Ko, T. K.; Kuo, C. T.; Yu, Kuo-Hui; Shei, Shih-Chang; Chiou, Y. Z. |
| 國立成功大學 |
2004-04 |
Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
|
Chang, Shoou-Jinn; Chang, C. S.; Su, Yan-Kuin; Chuang, Ricky Wenkuei; Lai, W. C.; Kuo, C. H.; Hsu, Y. P.; Lin, Y. C.; Shei, Shih-Chang; Lo, H. M.; Ke, J. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2011-04-01 |
Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror+SiO(2)/TiO(2) DBR Backside Reflector
|
Lin, Nan-Ming; Shei, Shih-Chang; Chang, Shoou-Jinn |
| 國立成功大學 |
2011-04-01 |
Nitride-based LEDs with high-reflectance and wide-angle Ag mirror+SiO2/TiO2 DBR backside reflector
|
Lin, Nan-Ming;Shei,Shih-Chang;Chang, Shoou-Jinn |
| 國立成功大學 |
2005-12-01 |
Nitride-based LEDs with ITO on nanostructured silicon contact layers
|
Kuo, C. H.; Chen, S. C.; Chang, Shoou-Jinn |
| 國立成功大學 |
2004-10 |
Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
|
Wen, Ten-Chin; Chang, Shoou-Jinn; Lee, Ching-Ting; Lai, W. C.; Sheu, Jinn-Kong |
| 國立成功大學 |
2005-09 |
Nitride-Based LEDs With MQW Active Regions Grown by Different Temperature Profiles
|
Chang, Shoou-Jinn; Wei, Sun-Chin; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Chen, Shi-Ming; Li, W. L. |
| 國立成功大學 |
2005-12 |
Nitride-based LEDs with n(-)-GaN current spreading layers
|
Su, Yan-Kuin; Li, W. L.; Chen, S. M.; Chuang, R. W.; Wei, S. C.; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-08T15:16:20Z |
Nitride-based LEDs with nano-scale textured sidewalls using natural lithography
|
Huang, HW; Kuo, HC; Chu, JT; Lai, CF; Kao, CC; Lu, TC; Wang, SC; Tsai, RJ; Yu, CC; Lin, CF |
| 國立成功大學 |
2003-12 |
Nitride-based LEDs with p-InGaN capping layer
|
Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran |
| 實踐大學 |
2009 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
|
Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C. |
| 國立成功大學 |
2009-04-15 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
|
Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C. |
| 國立成功大學 |
2003 |
Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer
|
Kuo, C. H.; Chang, S. J.; Su, Y. K.; Chen, J. F.; �Sheu, �Jinn-Kong; Tsai, J. M. |
| 國立成功大學 |
2004-03 |
Nitride-based LEDs with textured side walls
|
Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M. |
| 國立成功大學 |
2005-08 |
Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
|
Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L. |
| 國立成功大學 |
2007-07-02 |
Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography
|
Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong |
| 國立成功大學 |
2003-02 |
Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
|
Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming |
| 國立成功大學 |
2006-11 |
Nitride-based light emitting diodes with textured sidewalls and pillar waveguides
|
Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung |
Showing items 615171-615195 of 2349067 (93963 Page(s) Totally)
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