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Showing items 624431-624440 of 2348487 (234849 Page(s) Totally) << < 62439 62440 62441 62442 62443 62444 62445 62446 62447 62448 > >> View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:05:30Z |
NUMERICAL-ANALYSIS OF NONEQUILIBRIUM ELECTRON-TRANSPORT IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC MODFETS
|
WANG, TH; HSIEH, CH |
| 國立交通大學 |
2014-12-08T15:06:23Z |
NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
|
GUO, SF |
| 國立交通大學 |
2014-12-08T15:05:11Z |
NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS
|
LO, SH; LEE, CP |
| 國立交通大學 |
2014-12-08T15:05:01Z |
NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETS
|
LO, SH; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:51Z |
NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS
|
LO, SH; LEE, CP |
| 國立交通大學 |
2014-12-08T15:05:50Z |
NUMERICAL-SIMULATION OF DEGRADATION OF ALLUVIAL CHANNEL BEDS - DISCUSSION
|
YANG, JC |
| 國立交通大學 |
2014-12-08T15:04:34Z |
NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS
|
CHANG, SJ; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:50Z |
NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS
|
CHANG, SJ; LEE, CP |
| 國立交通大學 |
2014-12-08T15:04:20Z |
NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENT
|
CHANG, SJ; LEE, CP |
| 國立交通大學 |
2014-12-08T15:03:52Z |
NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETS
|
CHANG, SJ; LEE, CP |
Showing items 624431-624440 of 2348487 (234849 Page(s) Totally) << < 62439 62440 62441 62442 62443 62444 62445 62446 62447 62448 > >> View [10|25|50] records per page
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