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Showing items 628101-628110 of 2348638 (234864 Page(s) Totally)
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| 元智大學 |
2006 |
Ohlson 模型之驗證-運用Panel 共整合方法
|
呂勇賜; Yung-Tzu Lu |
| 國立政治大學 |
2007 |
Ohlson-Juettner模型在台灣適用性之研究
|
葉珮穎 |
| 朝陽科技大學 |
2011-12-31 |
Ohlson修正式現金會計模型下-綜合現金盈餘對企業價值之資訊內涵研探
|
林佳蓉; Lin, Chia-Jung |
| 朝陽科技大學 |
2010-10-22 |
Ohlson修正式現金會計模型下之綜合現金盈餘對企業價值之資訊內涵研探
|
黃素慧; 林佳蓉 |
| 元智大學 |
2006 |
Ohlson模型與股利折現模型之實證研究
|
洪莉雯; Li-Wen Hung |
| 國立成功大學 |
2017 |
Ohmic contact behavior of aluminum-doped zinc oxide with carbon-doped p-GaP epilayer for AlGaInP LEDs applications
|
Tseng, M.-C.;Wuu, D.-S.;Chen, Chen C.-L.;Lee, H.-Y.;Horng, R.-H. |
| 國立交通大學 |
2018-08-21T05:54:01Z |
Ohmic contact behavior of aluminum-doped zinc oxide with carbondoped p-GaP epilayer for AlGaInP LEDs applications
|
Tseng, Ming-Chun; Wuu, Dong-Sing; Chen, Chi-Lu; Lee, Hsin-Ying; Horng, Ray-Hua |
| 國立臺灣科技大學 |
2015 |
Ohmic contact fabrication using a focused-ion beam technique and electrical characterization for layer semiconductor nanostructures
|
Chen, R.-S.;Tang, C.-C.;Shen, W.-C.;Huang, Y.-S. |
| 國立交通大學 |
2014-12-16T06:15:25Z |
OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
|
CHANG, Edward Yi; KUO, Chien-I; CHANG, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:28:53Z |
Ohmic contact on n-type Ge using Yb-germanide
|
Zheng, Zhi-Wei; Ku, Teng-Chieh; Liu, Ming; Chin, Albert |
Showing items 628101-628110 of 2348638 (234864 Page(s) Totally)
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