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Showing items 726776-726800 of 2348964 (93959 Page(s) Totally)
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| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
|
Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2022-04-5 |
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
|
Tseng;Hsiao-Ting;Hsu;Tsung-Hsien;Tsai;Meng-Hung;Huang;Chi-Yuen;Huang;Cheng-Liang |
| 國立成功大學 |
2022-03 |
Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications
|
Wu;You-Shen;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 國立成功大學 |
2016-06 |
Resistive switching characteristics of sputtered AlN thin films
|
Tseng, Zong-Liang;Chen, Lung-Chien;Li, Wan-Ying;Chu, Sheng-Yuan |
| 國立東華大學 |
2009-11 |
Resistive switching characteristics of Ti/CuO/Pt memory devices
|
林群傑; Lin, Chun-Chieh; Wang, Sheng-Yu ; Huang, Chih-Wen ; Lee, Dai-Ying; Lin, Chih-Yang ;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
|
Pan, Tung-Ming; Lu, Chih-Hung; Mondal, Somnath; Ko, Fu-Hsiang |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
|
Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2007 |
Resistive switching effects in Nd0.7Ca0.3MnO3 manganite
|
Hsu, D.; Lin, J. G.; Wu, W. F. |
| 國立東華大學 |
2007-11 |
Resistive switching in V-doped SrZrO3 thin film for RRAM applications
|
林群傑; Lin, Chun-Chieh; Jan Shih-Wei ; Lin Meng-Han; Yu, Jung-Sheng ;Tseng, Tseung-Yuen |
| 國立成功大學 |
2016-04 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立東華大學 |
2006-09 |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
林群傑; Lin, Chun-Chieh; Tu, Bing-Chung ;Lin Chao-Cheng ; Lin, Chen-Hsi;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立成功大學 |
2022-12 |
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer
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Lee;Ke-Jing;Lin;Wei-Shao;Wang;Li-Wen;Lin;Hsin-Ni;Wang;Yeong-Her |
| 臺大學術典藏 |
2018-09-10T09:17:02Z |
Resistive switching non-volatile and volatile memory behavior of aromatic polyimides with various electron-withdrawing moieties
|
Chen, C.-J.; Yen, H.-J.; Chen, W.-C.; Liou, G.-S.; GUEY-SHENG LIOU; WEN-CHANG CHEN |
| 國立交通大學 |
2019-04-02T06:04:27Z |
Resistive Switching Non-volatile Memory Feasible for 28nm and Beyond Embedded Logic CMOS Technology
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:35Z |
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
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Peng, Chung-Nan; Wang, Chun-Wen; Chan, Tsung-Cheng; Chang, Wen-Yuan; Wang, Yi-Chung; Tsai, Hung-Wei; Wu, Wen-Wei; Chen, Lih-Juann; Chueh, Yu-Lun |
| 國立聯合大學 |
2010 |
Resistive Switching of Hafnium Oxide
|
Jiann Shieh |
| 國立交通大學 |
2017-04-21T06:48:33Z |
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
|
Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
| 國立成功大學 |
2021-09 |
Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications
|
Chu;Yu-Tseng;Tsai;Meng-Hung;Huang;Cheng-Liang |
Showing items 726776-726800 of 2348964 (93959 Page(s) Totally)
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