| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2007 |
Resistive switching effects in Nd0.7Ca0.3MnO3 manganite
|
Hsu, D.; Lin, J. G.; Wu, W. F. |
| 國立東華大學 |
2007-11 |
Resistive switching in V-doped SrZrO3 thin film for RRAM applications
|
林群傑; Lin, Chun-Chieh; Jan Shih-Wei ; Lin Meng-Han; Yu, Jung-Sheng ;Tseng, Tseung-Yuen |
| 國立成功大學 |
2016-04 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立東華大學 |
2006-09 |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
林群傑; Lin, Chun-Chieh; Tu, Bing-Chung ;Lin Chao-Cheng ; Lin, Chen-Hsi;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立成功大學 |
2022-12 |
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer
|
Lee;Ke-Jing;Lin;Wei-Shao;Wang;Li-Wen;Lin;Hsin-Ni;Wang;Yeong-Her |
| 臺大學術典藏 |
2018-09-10T09:17:02Z |
Resistive switching non-volatile and volatile memory behavior of aromatic polyimides with various electron-withdrawing moieties
|
Chen, C.-J.; Yen, H.-J.; Chen, W.-C.; Liou, G.-S.; GUEY-SHENG LIOU; WEN-CHANG CHEN |
| 國立交通大學 |
2019-04-02T06:04:27Z |
Resistive Switching Non-volatile Memory Feasible for 28nm and Beyond Embedded Logic CMOS Technology
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:35Z |
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
|
Peng, Chung-Nan; Wang, Chun-Wen; Chan, Tsung-Cheng; Chang, Wen-Yuan; Wang, Yi-Chung; Tsai, Hung-Wei; Wu, Wen-Wei; Chen, Lih-Juann; Chueh, Yu-Lun |
| 國立聯合大學 |
2010 |
Resistive Switching of Hafnium Oxide
|
Jiann Shieh |
| 國立交通大學 |
2017-04-21T06:48:33Z |
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
|
Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
| 國立成功大學 |
2021-09 |
Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications
|
Chu;Yu-Tseng;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 南台科技大學 |
2016-05 |
Resistive Switching Properties in Transparent Nonvolatile Indium Tin Oxide Thin Film Resistance Random Access Memories
|
Chen, Mei-Li; Cheng, Chien-Min; Chen, Kai-Huang; Jong, Fuh-Cheng; Pan, Yi-Yun |
| 國立成功大學 |
2018-04 |
Resistive switching properties of alkaline earth oxide-based memory devices
|
Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her |
| 國立成功大學 |
2022-07-25 |
Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications
|
Chen;Yu-Ta;Hsu;Tsung-Hsien;Huang;Cheng-Liang |
| 國立成功大學 |
2022-12 |
Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application
|
Tsai;Meng-Hung;Shih;Chia-Jung;Chang;Che-Wei;Chu;Yu-Tseng;Wu;You-Shen;Huang;Cheng-Liang |
| 國立交通大學 |
2014-12-08T15:05:08Z |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
|
Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
|
林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:16Z |
Resistive switching properties of SrZrO(3)-based memory films
|
Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-04 |
Resistive switching properties of SrZrO3-based memory films
|
林群傑; Lin, Chun-Chieh; Lin, Chao-Cheng ;Tu Bing-Chung ; Yu Jung-Sheng ; Lin Chen-Hsi ; Tseng, Tseung-Yuen |
| 國立成功大學 |
2020-06 |
Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device
|
Hsiao;Yuan-Wen;Wang;Shi-Yu;Huang;Cheng-Liang;Leu;Ching-Chich;Shih;Chuan-Feng |
| 國立成功大學 |
2020 |
Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device
|
Hsiao, Y.-W.;Wang, S.-Y.;Huang, C.-L.;Leu, C.-C.;Shih, C.-F. |
| 國立成功大學 |
2022 |
Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device
|
Jain, N.;Sharma, Sharma S.K.;Kumawat, R.;Jain, P.K.;Kumar, D.;Vyas, R. |
