| 國立交通大學 |
2014-12-08T15:25:08Z |
RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs
|
Wang, Sheng-Chun; Su, Pin; Chen, Kun-Ming; Lin, Chien-Ting; Liang, Victor; Huang, Guo-Wei |
| 國立臺灣科技大學 |
2013 |
RF front-end and complex BPF for reconfigurable low-IF receiver
|
Chen, H.-C.;Chang, S.-W.;Tu, B.-R. |
| 國立交通大學 |
2019-05-02T00:26:47Z |
RF Harvesting System for Low-Power Applications Using FinFETs
|
Nagateja, T.; Srinivasulu, A.; Pal, Dipankar |
| 國立臺灣海洋大學 |
2007 |
RF ID晶片韌體設計與自動停車管理系統應用
|
Hsien-Chiu Huang; 黃獻丘 |
| 國立臺灣海洋大學 |
2007 |
RF ID晶片韌體設計與自動停車管理系統應用
|
Hsien-Chiu Huang; 黃獻丘 |
| 國立高雄師範大學 |
2013-04 |
RF Inductors on HR-Si Substrates with a Nanocrystalline Silicon Passivation Layer
|
Ruey-Lue Wang;Chao-Jung Chen;Yu-Ru Lin;Pin-Yi Liu;Yan-Kuin Su;Ting-Jen Hsueh; 王瑞祿 |
| 國立高雄師範大學 |
2012-09 |
RF Inductors on Nanocrystalline Silicon Passivated HR-Si Substrates
|
Ruey-Lue Wang;Yu-Ru Lin;Pin-Yi Liu;Chao-Jung Chen;Yan-Kuin Su;Ting-Jen Hsueh; 王瑞祿 |
| 國立交通大學 |
2014-12-08T15:27:03Z |
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
|
Wu, YH; Chin, A; Shih, KH; Wu, CC; Liao, CP; Pai, SC; Chi, CC |
| 國立交通大學 |
2018-08-21T05:54:17Z |
RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface
|
Luong, Tien Tung; Lumbantoruan, Franky; Chen, Yen-Yu; Ho, Yen-Teng; Weng, You-Chen; Lin, Yueh-Chin; Chang, Shane; Chang, Edward-Yi |
| 國立成功大學 |
2016-10-07 |
RF magnetron co-sputtering growth and characterisation of multiferroic composite films of Ni0.5Zn0.5Fe2O4 BiFeO3
|
Lu, Shih-Zong; Qi, Xiaoding |
| 國立成功大學 |
2019-10-5 |
RF magnetron sputter deposition and electrical properties of La and Y doped SrTiO3 epitaxial films
|
Guo;Chen-Yuan;Qi;Xiaoding |
| 國立交通大學 |
2014-12-08T15:04:29Z |
RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE FILM ON A REACTIVELY ION-ETCHED ACRYLIC SUBSTRATE
|
CHIOU, BS; HSIEH, ST |
| 國立成功大學 |
2011-04 |
RF MEMS capacitive switch with leaky nanodiamond dielectric film
|
Chen, Changwei; Tzeng, Yonhua; Kohn, Erhard; Wang, Chin-Hung; Mao, Jun-Kai |
| 國立交通大學 |
2014-12-08T15:26:31Z |
RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
|
Chen, SB; Lai, CH; Chin, A; Hsieh, JC; Liu, J |
| 國立交通大學 |
2014-12-08T15:19:10Z |
RF MOSFET characterization by four-port measurement
|
Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:16Z |
RF noise characteristics of high-k AlTiOx and Al2O3 gate dielectrics
|
Chen, SB; Huang, CH; Chin, A; Lin, J; Jou, JP; Su, KC; Liu, J |
| 國立交通大學 |
2014-12-08T15:41:42Z |
RF noise in 0.18-mu m and 0.13-mu m MOSFETs
|
Huang, CH; Lai, CH; Hsieh, JC; Liu, J; Chin, A |
| 國立交通大學 |
2017-04-21T06:48:55Z |
RF Noise Modeling of SiGe HBTs Using Four-Port De-embedding Method
|
Chen, Kun-Ming; Chen, Han-Yu; Huang, Guo-Wei; Liao, Wen-Shiang; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:03:41Z |
RF Noise Shielding Method and Modelling for Nanoscale MOSFET
|
Guo, Jyh-Chyurn; Lin, Yi-Min; Tsai, Yi-Hsiu |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
|
Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:06:39Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
|
Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2019-04-02T05:58:17Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
|
Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 元智大學 |
2010-07 |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1−xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications
|
許恒通; Chien-I Kuo; Yu-Lin Chen; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Wen-Chung Tsern; Kartik Chandra Sahoo |
| 臺大學術典藏 |
2021-09-21T23:19:37Z |
RF Performance of Stacked Si Nanosheet nFETs
|
Lin, Hsin Cheng; Chou, Tao; Chung, Chia Che; Tsen, Chia Jung; Huang, Bo Wei; CHEN-WUING LIU |
| 臺大學術典藏 |
2022-04-25T06:41:32Z |
RF Performance of Stacked Si Nanosheet nFETs
|
Lin H.-C;Chou T;Chung C.-C;Tsen C.-J;Huang B.-W;Liu C.W.; Lin H.-C; Chou T; Chung C.-C; Tsen C.-J; Huang B.-W; Liu C.W.; CHEE-WEE LIU |
