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Showing items 750201-750250 of 2349123 (46983 Page(s) Totally)
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| 元智大學 |
2008-08 |
Self-adjusting weight Particle Swarm Optimization with mean shift
|
李建誠; Wen-Cheng Hu |
| 臺大學術典藏 |
2018-09-10T05:50:34Z |
Self-adjusting weighted median filter for removing impulse noise in images
|
Chen, Chun-Te;Chen, Liang-Gee; Chen, Chun-Te; Chen, Liang-Gee; LIANG-GEE CHEN |
| 國立成功大學 |
2017-03-20 |
Self-adjustment and disintegration threshold of Langmuir solitons in inhomogeneous plasmas
|
Chen;Y, A.;Nishimura;Y;Nishida;Y;Cheng;C, Z. |
| 國立交通大學 |
2014-12-08T15:29:35Z |
Self-adjustments may account for the contradictory correlations between HRV and motion-sickness severity
|
Lin, Chun-Ling; Jung, Tzyy-Ping; Chuang, Shang-Wen; Duann, Jeng-Ren; Lin, Chin-Teng; Chiu, Tzai-Wen |
| 國家衛生研究院 |
2015-03 |
Self-adjuvanting lipoimmunogens for therapeutic HPV vaccine development: Potential clinical impact
|
Shen, KY;Chang, LS;Leng, CH;Liu, SJ |
| 中國醫藥大學 |
2015-03 |
Self-adjuvanting lipoimmunogens for therapeutic HPV vaccine development: potential clinical impact
|
沈冠印(Kuan-Yin Shen);張立昇(Li-Sheng Chang);冷治湘;劉士任(Shih-Jen Liu)* |
| 國立台東大學 |
2007 |
Self-administered Acupressure Reduces the Symptoms that Limit Daily Activities in Bronchiectasis Patients: Pilot Study Findings
|
Maa, S.H., Tsou, T.S., Wang, K.Y., Wang, C.H., Lin, H.C., Huang, Y.H |
| 國立高雄師範大學 |
2004 |
Self-affinity Dimensions of Topography and its Implications in Morphotectonics
|
宋國城; Quo-Cheng Sung |
| 國立成功大學 |
2004-10-01 |
Self-affinity dimensions of topography and its implications in morphotectonics: an example from Taiwan
|
Sung, Quo-Cheng; Chen, Yen-Chieh |
| 臺大學術典藏 |
2018-09-10T09:22:06Z |
Self-aggregated Si quantum dots in amorphous Si-rich SiC
|
Lo, T.-C.; Tsai, L.-H.; Cheng, C.-H.; Wang, P.-S.; Pai, Y.-H.; Wu, C.-I.; Lin, G.-R.; CHIH-I WU; GONG-RU LIN |
| 臺大學術典藏 |
2020-06-11T06:37:59Z |
Self-aggregated Si quantum dots in amorphous Si-rich SiC
|
Lo, Tzu-Chieh;Tsai, Ling-Hsuan;Cheng, Chih-Hsien;Wang, Po-Sheng;Pai, Yi-Hao;Wu, Chih-I.;Lin, Gong-Ru; Lo, Tzu-Chieh; Tsai, Ling-Hsuan; Cheng, Chih-Hsien; Wang, Po-Sheng; Pai, Yi-Hao; Wu, Chih-I.; Lin, Gong-Ru; GONG-RU LIN |
| 國立成功大學 |
2012-04 |
Self-aggregating mutant TRAPPC6A from partial exon 1 gene deletion activates caspases, binds TIAF1, and generates amyloid beta in hippocampus
|
Chang, Nan-Shan; Chang, Jean-Yun |
| 國立成功大學 |
2013-02-28 |
Self-aggregating TIAF1 in lung cancer progression
|
Hong, Qunying; Hsu, Li-Jin; Chou, Pei-Yi; Chou, Ying-Tsen; Lu, Chen-Yu; Chen, Yu-An; Chang, Nan-Shan |
| 國立臺灣科技大學 |
2014 |
Self-aggregation of amphiphilic [60]fullerenyl focal point functionalized PAMAM dendrons into pseudodendrimers: DNA binding involving dendriplex formation
|
Hung, C.-H.;Chang, W.-W.;Liu, S.-C.;Wu, S.-J.;Chu, C.-C.;Tsai, Y.-J.;Imae, T. |
| 國立臺灣科技大學 |
2015 |
Self-aggregation of amphiphilic [60]fullerenyl focal point functionalized PAMAM dendrons into pseudodendrimers: DNA binding involving dendriplex formation
|
Hung, C.-H;Chang, W.-W;Liu, S.-C;Wu, S.-J;Chu, Chu C.-C;Tsai, Y.-J;Imae, T. |
| 中山醫學大學 |
2014-08 |
Self-aggregation of amphiphilic [60]fullerenyl focal point functionalized PAMAM dendrons into pseudodendrimers: DNA binding involving dendriplex formation
|
Chang, Cheng‐Hsiang HungWen‐Wei; Liu, Ssu‐Ching; Wu, Shang‐Jung; Chu, Chih‐Chien; Tsai, Ya‐Ju; Imae, Toyoko |
| 國立臺灣科技大學 |
2014 |
Self-aligned amorphous indium-gallium-zinc-oxide thin-film transistor using a two-mask process without etching-stop layer
|
Fan C.-L., Shang M.-C., Li B.-J., Wang S.-J., Lee W.-D. |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Self-aligned amorphous-silicon TFTs on clear plastic substrates
|
Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 國立臺灣大學 |
2006 |
Self-aligned amorphous-silicon thin-film transistors on clear plastic substrates
|
Cheng, I-Chun; Kattamis, Alex; Long, Ke; Sturm, James C.; Wagner, Sigurd |
| 臺大學術典藏 |
2019-10-31T07:15:20Z |
Self-aligned amorphous-silicon thin-film transistors on clear plastic substrates
|
I-CHUN CHENG;Sigurd Wagner;James C. Sturm;Ke Long;Alex Kattamis;I-Chun Cheng; I-Chun Cheng; Alex Kattamis; Ke Long; James C. Sturm; Sigurd Wagner; I-CHUN CHENG |
| 國立中山大學 |
2007-05 |
Self-aligned Block Oxide Enclosed Body Process for FDSOI Devices
|
Yi-Chuen Eng;Jyi-Tsong Lin |
| 國立中山大學 |
2007-05 |
Self-aligned Block Oxide Process for bFDSOI Devices
|
Yi-Chuen Eng;Jyi-Tsong Lin |
| 國立中山大學 |
2007-09 |
Self-aligned Block Oxide Process for bSPIFETs
|
Jyi-Tsong Lin;Yi-Chuen Eng |
| 國立中山大學 |
2009-05 |
Self-Aligned Block-Oxide Quasi-SOI MOSFETs with S/D-Tie
|
Chih-Hung Sun; Jyi-Tsong Lin; Yi-Chuen Eng; Tzu-Feng Chang; Po-Hiesh Lin; Hsuan-Hsu Chen; Chih-Hao Kuo; Hsien-Nan Chiu |
| 國立中山大學 |
2005 |
Self-aligned Co nanoparticle chains supported by single crystalline Al2O3/NiAl(100) template
|
Wen-Chin Lin;Chien-Cheng Kuo;Meng-Fan Luo;Ker-Jar Song;Minn-Tsong Lin |
| 國立臺灣大學 |
2005-01 |
Self-Aligned Co Nanoparticle Chains Supported by Single Crystalline Al2O3/NiAl(100) Template
|
Lin, W.C.; Kuo, C. C.; Ro, M.F.; Song, K. J.; Lin, Minn-Tsong |
| 臺大學術典藏 |
2018-09-10T05:20:21Z |
Self-aligned Co nanoparticle chains supported by single-crystalline Al2O3/NiAl(100) template
|
Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; MINN-TSONG LIN |
| 國立交通大學 |
2014-12-08T15:11:35Z |
Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
|
Zhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia |
| 修平科技大學 |
2004 |
Self-Aligned Deposition process for ultrathin electroless barriers and copper films on low-k dielectric films
|
G. S. Chen;S. T. Chen;R. F. Louh;T. J. Yang;C. K. Lin |
| 國立臺灣海洋大學 |
2007-07 |
Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application
|
S. W. Tan; C. W. Liao |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
|
Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立臺灣海洋大學 |
2013 |
Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium
|
Jeff T.H. Tsai;Wei-Syun Wang;Szu-Hung Chen;Chia-Liang Sun |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
|
Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
|
Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:21Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
|
Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric
|
Chen, Chih-Ping; Lin, Tsung-Da; Chang, Yao-Chung; Hong, Mingwhei; Kwo, J Raynien; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric
|
Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
|
MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics
|
Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:39Z |
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics
|
MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
|
Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
|
Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
|
Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric
|
Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics
|
Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2010 |
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics
|
Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
Showing items 750201-750250 of 2349123 (46983 Page(s) Totally)
<< < 15000 15001 15002 15003 15004 15005 15006 15007 15008 15009 > >>
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