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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:44:10Z |
A numerical study of multi filament formation in metal-ion based CBRAM
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2018-01-24T07:38:30Z |
納米電阻式記憶體導體特點的分析方法
|
白達磊; 曾俊元; berco, dan; Tseng,Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:48Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAM
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:55:16Z |
A comprehensive study of bipolar operation in resistive switching memory devices
|
Berco, Dan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:27Z |
A stochastic simulation method for the assessment of resistive random access memory retention reliability
|
Berco, Dan; Tseng, Tseung-Yuen |
Showing items 1-7 of 7 (1 Page(s) Totally)
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