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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"h h lin"的相关文件
显示项目 111-120 / 259 (共26页)
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| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors
|
Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
|
Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally
|
C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy
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C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
|
T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
|
C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
|
I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
显示项目 111-120 / 259 (共26页)
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