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機構	日期	題名	作者
臺大學術典藏	2018-09-10T06:34:46Z	Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors	Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy	C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10	I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy	S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
臺大學術典藏	2018-09-10T06:34:43Z	Comparative study of InAs quantum dots with different InGaAs capping methods	C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:01Z	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy	D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	MBE growth of quaternary InAsPSb alloy	H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Mid-infrared InAsPSb/InAsSb quantum-well light emitter	C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN

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