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Taiwan Academic Institutional Repository >
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"hwu jenn gwo"
Showing items 91-100 of 210 (21 Page(s) Totally)
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| 國立臺灣大學 |
1996 |
Process control of rapid thermal N2O-annealed thin gate oxides
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Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
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呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen |
| 國立臺灣大學 |
1995 |
Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides
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Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1995 |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
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胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 國立臺灣大學 |
1995 |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
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胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C. |
| 臺大學術典藏 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
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Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994-10 |
金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮
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胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲 |
| 國立臺灣大學 |
1994 |
Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment
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Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen |
| 國立臺灣大學 |
1994 |
Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics
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Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo |
Showing items 91-100 of 210 (21 Page(s) Totally)
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