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機構	日期	題名	作者
國立臺灣大學	1996	Process control of rapid thermal N2O-annealed thin gate oxides	Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo
國立臺灣大學	1996	複合式半導體微型壓力感測計之研究(總計畫)	呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen
國立臺灣大學	1995	Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides	Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo
國立臺灣大學	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1995	Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides	胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.
國立臺灣大學	1995	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.
臺大學術典藏	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo
國立臺灣大學	1994-10	金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮	胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲
國立臺灣大學	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen
國立臺灣大學	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo
國立臺灣大學	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S.
國立臺灣大學	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Eliminating the Surface Inversion Layer Under the Field Oxide by Low Pressure Rapid Thermal Annealing	胡振國; Wu, W. L; Lin, J. J.; Hwu, Jenn-Gwo; Wu, W. L; Lin, J. J.
國立臺灣大學	1994	Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide- Nitride-Oxide-Semiconductor Devices by Irradiation-Then-Anneal Treatments.	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1994	Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Hwu, Jenn-Gwo; Lee, Si-Chen; Lu, W. S.; Chou, J. S.; Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Hwu, Jenn-Gwo; Lee, Si-Chen
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	胡振國; 吳瑞北; Hwu, Jenn-Gwo; Wu, Ruey-Beei
國立臺灣大學	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學	1993	Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1993	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.
國立臺灣大學	1993	Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lu, W. S.; Lin, Kuen-Chyung
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	Hwu, Jenn-Gwo; Wu, Ruey-Beei; Hwu, Jenn-Gwo; Wu, Ruey-Beei
臺大學術典藏	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1992	Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits	胡振國; Hwu, Jenn-Gwo

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