| 國立交通大學 |
2019-04-03T06:43:59Z |
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
|
Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T07:41:37Z |
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
|
H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 國立高雄師範大學 |
2010 |
Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels
|
Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-10-28 |
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
|
J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma |
| 臺大學術典藏 |
2018-09-10T07:04:10Z |
Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
|
Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2020-01-13T08:22:40Z |
Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
|
Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO |
| 國立交通大學 |
2014-12-08T15:36:25Z |
Gate-all-around floating-gate memory device with triangular poly-Si nanowire channels
|
Tsai, Jung-Ruey; Lee, Ko-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 臺大學術典藏 |
2018-09-10T14:58:05Z |
Gate-all-around Ge FETs
|
Liu, C.W.;Chen, Y.-T.;Hsu, S.-H.; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels
|
Su, Chun-Jung; Tsai, Tzu-I; Liou, Yu-Ling; Lin, Zer-Ming; Lin, Horng-Chih; Chao, Tien-Sheng |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels
|
Tso, Chia-Tsung; Liu, Tung-Yu; Sheu, Jeng-Tzong |
| 國立交通大學 |
2014-12-08T15:27:28Z |
Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels
|
Kang, Tsung-Kuei; Liao, Ta-Chuan; Lin, Chia-Min; Liu, Han-Wen; Wang, Fang-Hsing; Cheng, Huang-Chung |
| 國立交通大學 |
2014-12-08T15:22:22Z |
Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
|
Liao, Ta-Chuan; Kang, Tsung-Kuei; Lin, Chia-Min; Wu, Chun-Yu; Cheng, Huang-Chung |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope
|
Liu, Tung-Yu; Lo, Shen-Chuan; Sheu, Jeng-Tzong |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
|
Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 臺大學術典藏 |
2018-09-10T14:57:38Z |
Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering
|
Chiu, I.-C.;Cheng, I.-C.; Chiu, I.-C.; Cheng, I.-C.; I-CHUN CHENG |
| 國立交通大學 |
2015-12-04T07:03:11Z |
GATE-BOOSTING RECTIFIER AND METHOD OF PERMITTING CURRENT TO FLOW IN FAVOR OF ONE DIRECTION WHEN DRIVEN BY AC INPUT VOLTAGE
|
Wang Yu-Jiu; Liao I-No; Tsai Chao-Han; Pakasiri Chatrpol |
| 國立中山大學 |
2006 |
Gate-controlled spin splitting in GaN/AlN quantum wells
|
Ikai Lo;W.T. Wang;M.H. Gao;J.K. Tsai;S.F. Tsay;J.C. Chiang |
| 國立中山大學 |
2006 |
Gate-controlled Spin Splitting in GaN/AlN Quantum Wells
|
Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;Jih-Chen Chiang |
| 國立中山大學 |
2006 |
Gate-Controlled Spin Splitting in GaN/AlN Quantum Wells
|
Ikai Lo;W.T. Wang;M.H. Gau;J.K. Tsai;S.F. Tsay;J.C. Chiang |
| 國立交通大學 |
2014-12-08T15:17:41Z |
Gate-controlled ZnO nanowires for field-emission device application
|
Li, SY; Lee, CY; Lin, P; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:31:00Z |
Gate-first n-MOSFET with a sub-0.6-nm EOT gate stack
|
Cheng, C. H.; Chou, K. I.; Chin, A. |
| 國立交通大學 |
2014-12-08T15:47:59Z |
Gate-First TaN/La(2)O(3)/SiO(2)/Ge n-MOSFETs Using Laser Annealing
|
Chen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert |
| 中華大學 |
2010 |
Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
|
吳建宏; rossiwu |
| 國立交通大學 |
2019-04-02T06:00:27Z |
Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
|
Chen, W. B.; Wu, C. H.; Shie, B. S.; Chin, Albert |
