臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

About TAIR
	About TAIR

Browse By
	Institution
	Author
	Title
	Date
	Statistics Chart
	Institution Facts
	Trend

News
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

Copyright
	Publisher & Journal Policy
	TAIR Copyright Conference Minutes

Related Links
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

Jump to: [ Chinese Items ] [ 0-9 ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]

or enter the first few letters:

Showing items 470196-470205 of 2348973 (234898 Page(s) Totally)
<< < 47015 47016 47017 47018 47019 47020 47021 47022 47023 47024 > >>
View [10|25|50] records per page

Institution	Date	Title	Author
國立彰化師範大學	2009-03	High-barrier Rectifying Contacts on Undoped ZnO Films with (NH4)2Sx Treatment Owing to Fermi-level Pinning	Lin, Yow-Jon; Chang, Shih-Sheng; Chang, Hsing-Cheng; Liu, Yang-Chun
臺大學術典藏	2022-02-21T23:30:53Z	High-Baud-Rate 32-QAM OFDM Single-arm and Dual-arm Encoded Silicon Mach-Zehnder Modulator	Kao, Shih Chun; Chung, Kuo Fang; Tsai, Cheng Ting; DING-WEI HUANG; Shih, Tien Tsong; GONG-RU LIN
國立成功大學	2003	High-beta characteristics of first and second-stable spherical tokamaks in reconnection heating experiments of TS-3	�Ono,� Yasushi; Kimura, T.; Kawamori, E.; Murata, Y.; Miyazaki, S.; Ueda, Y.; Inomoto, M.; Balandin, A. L.; Katsurai, M.
元智大學	Dec-17	High-Bit-Rate SOA-Based Optical Network Unit with Low Seeding Power That Uses Feedback Seeding Scheme	Mohammed Syuhaimi Ab-Rahman; Farhat shaltami; I-Shyan Hwang; Almabrok Swedan
國立成功大學	1998-06	High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer	Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh
國立成功大學	2023	High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate	Ke, J.-H.;Lee, C.-S.;Li, Y.-X.;Hsu, W.-C.
國立高雄師範大學	2002	High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations	Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝
臺大學術典藏	2018-09-10T05:58:42Z	High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE	Lin, Y.-S.; Lu, S.-S.; Lu, S.-S.
國立臺灣大學	1996	High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE	Lin, Yo-Sheng; Lu, Shey-Shi
國立臺灣大學	1995	High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy	Lu, S. S.; Huang, C. L.; Sun, T. P.

Showing items 470196-470205 of 2348973 (234898 Page(s) Totally)
<< < 47015 47016 47017 47018 47019 47020 47021 47022 47023 47024 > >>
View [10|25|50] records per page

	English \| 正體中文 \| 简体中文 \| Total items :2856565
	Visitors : 53384534 Online Users : 1073 Project Commissioned by the Ministry of Education Project Executed by National Taiwan University Library