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显示项目 470196-470205 / 2348973 (共234898页)
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机构 日期 题名 作者
國立彰化師範大學 2009-03 High-barrier Rectifying Contacts on Undoped ZnO Films with (NH4)2Sx Treatment Owing to Fermi-level Pinning Lin, Yow-Jon; Chang, Shih-Sheng; Chang, Hsing-Cheng; Liu, Yang-Chun
臺大學術典藏 2022-02-21T23:30:53Z High-Baud-Rate 32-QAM OFDM Single-arm and Dual-arm Encoded Silicon Mach-Zehnder Modulator Kao, Shih Chun; Chung, Kuo Fang; Tsai, Cheng Ting; DING-WEI HUANG; Shih, Tien Tsong; GONG-RU LIN
國立成功大學 2003 High-beta characteristics of first and second-stable spherical tokamaks in reconnection heating experiments of TS-3 �Ono,� Yasushi; Kimura, T.; Kawamori, E.; Murata, Y.; Miyazaki, S.; Ueda, Y.; Inomoto, M.; Balandin, A. L.; Katsurai, M.
元智大學 Dec-17 High-Bit-Rate SOA-Based Optical Network Unit with Low Seeding Power That Uses Feedback Seeding Scheme Mohammed Syuhaimi Ab-Rahman; Farhat shaltami; I-Shyan Hwang; Almabrok Swedan
國立成功大學 1998-06 High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh
國立成功大學 2023 High-Breakdown P-Channel GaN MOS-HFETs With Al2O3-Dielectric and Drain Field-Plate Ke, J.-H.;Lee, C.-S.;Li, Y.-X.;Hsu, W.-C.
國立高雄師範大學 2002 High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝
臺大學術典藏 2018-09-10T05:58:42Z High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE Lin, Y.-S.; Lu, S.-S.; Lu, S.-S.
國立臺灣大學 1996 High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE Lin, Yo-Sheng; Lu, Shey-Shi
國立臺灣大學 1995 High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy Lu, S. S.; Huang, C. L.; Sun, T. P.

显示项目 470196-470205 / 2348973 (共234898页)
<< < 47015 47016 47017 47018 47019 47020 47021 47022 47023 47024 > >>
每页显示[10|25|50]项目