| 國立臺灣科技大學 |
2012 |
Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content
|
Chang, W.Z.;Chu, J.P.;Wang, S.F. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
|
Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立成功大學 |
2020-06 |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods
|
Su;Tzu-Han;Lee;Ke-Jing;Wang;Li-Wen;Chang;Yu-Chi;Wang;Yeong-Her |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
|
Lai, Chun-Hung; Chen, Chia-Hung; Tseng, Tseung-Yuen |
| 國立東華大學 |
2006-10 |
Resistive switching behavior of SrZrO3-based films for nonvolatile memory application
|
林群傑; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立成功大學 |
2014-11 |
Resistive Switching Behaviors of Sol-Gel-Derived MgNb2O6 Thin Films on ITO/glass Substrate
|
Ho, Yi-Da; Chen, Kung-Rong; Huang, Cheng-Liang |
| 臺大學術典藏 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
|
Chang, Wen-Yuan;Lin, Chin-An;He, Jr-Hau;Wu, Tai-Bor; Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立臺灣大學 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
|
Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立成功大學 |
2014-02-04 |
Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
|
Wu, Chun-Shiang; Ho, Y.D; Huang, C.L |
| 國立成功大學 |
2023 |
Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications
|
Cheng, Cheng C.-R.;Tsai, M.-H.;Hsu, T.-H.;Li, M.-J.;Huang, C.-L. |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
|
Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立臺灣科技大學 |
2017 |
Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScOx Films Doped with Nb and Zn
|
Wang, S.-F;Hsu, C.-C;Chu, J.P;Liu, Y.-X;Chen, L.-W. |
| 國立高雄應用科技大學 |
2013-02 |
Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory
|
劉志益; Liu, Chih-Yi;Huang, Jyun-Jie;Lai, Chun-Hung |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
|
Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
|
Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2023-11-10 |
Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation
|
Wafee;Seema;Leu;Ching-Chich;Chen;-Wen, Yu;Liu;Haochih, Bernard |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
|
Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2022-04-5 |
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
|
Tseng;Hsiao-Ting;Hsu;Tsung-Hsien;Tsai;Meng-Hung;Huang;Chi-Yuen;Huang;Cheng-Liang |
| 國立成功大學 |
2022-03 |
Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications
|
Wu;You-Shen;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 國立成功大學 |
2016-06 |
Resistive switching characteristics of sputtered AlN thin films
|
Tseng, Zong-Liang;Chen, Lung-Chien;Li, Wan-Ying;Chu, Sheng-Yuan |
| 國立東華大學 |
2009-11 |
Resistive switching characteristics of Ti/CuO/Pt memory devices
|
林群傑; Lin, Chun-Chieh; Wang, Sheng-Yu ; Huang, Chih-Wen ; Lee, Dai-Ying; Lin, Chih-Yang ;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
|
Pan, Tung-Ming; Lu, Chih-Hung; Mondal, Somnath; Ko, Fu-Hsiang |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
|
Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2007 |
Resistive switching effects in Nd0.7Ca0.3MnO3 manganite
|
Hsu, D.; Lin, J. G.; Wu, W. F. |
| 國立東華大學 |
2007-11 |
Resistive switching in V-doped SrZrO3 thin film for RRAM applications
|
林群傑; Lin, Chun-Chieh; Jan Shih-Wei ; Lin Meng-Han; Yu, Jung-Sheng ;Tseng, Tseung-Yuen |
| 國立成功大學 |
2016-04 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立東華大學 |
2006-09 |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
林群傑; Lin, Chun-Chieh; Tu, Bing-Chung ;Lin Chao-Cheng ; Lin, Chen-Hsi;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
|
Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立成功大學 |
2022-12 |
Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer
|
Lee;Ke-Jing;Lin;Wei-Shao;Wang;Li-Wen;Lin;Hsin-Ni;Wang;Yeong-Her |
| 臺大學術典藏 |
2018-09-10T09:17:02Z |
Resistive switching non-volatile and volatile memory behavior of aromatic polyimides with various electron-withdrawing moieties
|
Chen, C.-J.; Yen, H.-J.; Chen, W.-C.; Liou, G.-S.; GUEY-SHENG LIOU; WEN-CHANG CHEN |
| 國立交通大學 |
2019-04-02T06:04:27Z |
Resistive Switching Non-volatile Memory Feasible for 28nm and Beyond Embedded Logic CMOS Technology
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:35Z |
Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
|
Peng, Chung-Nan; Wang, Chun-Wen; Chan, Tsung-Cheng; Chang, Wen-Yuan; Wang, Yi-Chung; Tsai, Hung-Wei; Wu, Wen-Wei; Chen, Lih-Juann; Chueh, Yu-Lun |
| 國立聯合大學 |
2010 |
Resistive Switching of Hafnium Oxide
|
Jiann Shieh |
| 國立交通大學 |
2017-04-21T06:48:33Z |
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
|
Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
| 國立成功大學 |
2021-09 |
Resistive switching properties and conduction mechanisms of LaSmOx thin film by RF sputtering for RRAM applications
|
Chu;Yu-Tseng;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 南台科技大學 |
2016-05 |
Resistive Switching Properties in Transparent Nonvolatile Indium Tin Oxide Thin Film Resistance Random Access Memories
|
Chen, Mei-Li; Cheng, Chien-Min; Chen, Kai-Huang; Jong, Fuh-Cheng; Pan, Yi-Yun |
| 國立成功大學 |
2018-04 |
Resistive switching properties of alkaline earth oxide-based memory devices
|
Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her |
| 國立成功大學 |
2022-07-25 |
Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications
|
Chen;Yu-Ta;Hsu;Tsung-Hsien;Huang;Cheng-Liang |
| 國立成功大學 |
2022-12 |
Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application
|
Tsai;Meng-Hung;Shih;Chia-Jung;Chang;Che-Wei;Chu;Yu-Tseng;Wu;You-Shen;Huang;Cheng-Liang |
| 國立交通大學 |
2014-12-08T15:05:08Z |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
|
Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立東華大學 |
2007-12 |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
|
林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
