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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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顯示項目 726761-726770 / 2348973 (共234898頁)
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| 國立臺灣科技大學 |
2012 |
Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content
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Chang, W.Z.;Chu, J.P.;Wang, S.F. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
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Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立成功大學 |
2020-06 |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods
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Su;Tzu-Han;Lee;Ke-Jing;Wang;Li-Wen;Chang;Yu-Chi;Wang;Yeong-Her |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
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Lai, Chun-Hung; Chen, Chia-Hung; Tseng, Tseung-Yuen |
| 國立東華大學 |
2006-10 |
Resistive switching behavior of SrZrO3-based films for nonvolatile memory application
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林群傑; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立成功大學 |
2014-11 |
Resistive Switching Behaviors of Sol-Gel-Derived MgNb2O6 Thin Films on ITO/glass Substrate
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Ho, Yi-Da; Chen, Kung-Rong; Huang, Cheng-Liang |
| 臺大學術典藏 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
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Chang, Wen-Yuan;Lin, Chin-An;He, Jr-Hau;Wu, Tai-Bor; Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立臺灣大學 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
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Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立成功大學 |
2014-02-04 |
Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
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Wu, Chun-Shiang; Ho, Y.D; Huang, C.L |
| 國立成功大學 |
2023 |
Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications
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Cheng, Cheng C.-R.;Tsai, M.-H.;Hsu, T.-H.;Li, M.-J.;Huang, C.-L. |
顯示項目 726761-726770 / 2348973 (共234898頁)
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每頁顯示[10|25|50]項目
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