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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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顯示項目 445671-445680 / 2348570 (共234857頁)
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每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:36:34Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
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Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
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CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立成功大學 |
2017 |
Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT
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Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C. |
| 國立交通大學 |
2014-12-16T06:16:19Z |
Gate structure of metal oxide semiconductor field effect transistor
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Bing-Yue, Tsui; Chih-Feng, Huang |
| 國立交通大學 |
2019-04-03T06:43:59Z |
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
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Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong |
| 臺大學術典藏 |
2018-09-10T08:18:06Z |
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
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H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T07:41:37Z |
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
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H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
| 國立高雄師範大學 |
2010 |
Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels
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Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝 |
| 國立臺灣海洋大學 |
2010-10-28 |
Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels
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J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma |
顯示項目 445671-445680 / 2348570 (共234857頁)
<< < 44563 44564 44565 44566 44567 44568 44569 44570 44571 44572 > >>
每頁顯示[10|25|50]項目
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