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Institution	Date	Title	Author
國立交通大學	2017-04-21T06:55:43Z	Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors	Chen, Hua-Mao; Chang, Ting-Chang; Tai, Ya-Hsiang; Chiang, Hsiao-Cheng; Liu, Kuan-Hsien; Chen, Min-Chen; Huang, Cheng-Chieh; Lee, Chao-Kuei
臺大學術典藏	2018-09-10T04:28:26Z	Gate leakage suppression and contact engineering in nitride heterostructures	Wu, YR; Singh, M; Singh, J; YUH-RENN WU
臺大學術典藏	2018-09-10T04:59:04Z	Gate Misalignment Effect Related Capacitance Behavior of a 100nm DG FD SOI NMOS Device with n+/p+ Poly Top/Bottom Gate	C. H. Hsu; C. P. Yang; JAMES-B KUO; J. B. Kuo
國立成功大學	2020	Gate operation for habitat-oriented water management at Budai Salt Pan Wetland in Taiwan	Wang, H.-W.;Kuo, P.-H.;Dodd, A.E.
國立交通大學	2014-12-16T06:14:04Z	Gate oxide breakdown-withstanding power switch structure	Yang Hao-I; Chuang Ching-Te; Hwang Wei
國立交通大學	2014-12-16T06:15:14Z	GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE	YANG Hao-I; Chuang Ching-Te; Hwang Wei
國立交通大學	2014-12-08T15:45:36Z	Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7	Wu, YH; Chin, A
國立臺灣大學	2010	Gate oxide wear out using novel polysilazane-base inorganic as nano-scaling shallow trench filling	Ho, Ching Yuan; Shih, Kai-Yao; He, Jr Hau
中原大學	2010-04	Gate Oxide Weat out Using Novel Polysilazane-base Inorganic as Nano-scaling Shallow Trench Filling	Ching Yuan. Ho;Kai-Yao.Shih ; jr Hau He,
國立交通大學	2014-12-08T15:27:45Z	Gate oxynitride grown in N2O and annealed in no using rapid thermal processing	Sun, SC; Chen, CH; Lou, JC; Yen, LW; Lin, CJ

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