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顯示項目 446116-446125 / 2348973 (共234898頁)
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| 國立屏東大學 |
2022 |
GdTbCo於不同光能量下的磁化翻轉行為
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陳冠勲; CHEN, GUAN-XUN |
| 淡江大學 |
2009-10 |
GDTV-Jahrestagung im Oktober 2007 an der Tamkang Universitaet: Transnationales Deutsch (Teilnahme und Moderation der letzten Sektion)
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施莫尼 |
| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP
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Wu, H.-M.;Tsai, S.-J.;Ho, H.-I.;Lin, H.-H.; Wu, H.-M.; Tsai, S.-J.; Ho, H.-I.; Lin, H.-H.; HAO-HSIUNG LIN |
| 國立交通大學 |
2017-04-21T06:48:53Z |
Ge Channel MOSFETs Directly on Silicon
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Chen, Che Wei; Chung, Cheng-Ting; Chien, Chao Hsin |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
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Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:07:51Z |
Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
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Luo, Guang-Li; Han, Zong-You; Chien, Chao-Hsin; Ko, Chih-Hsin; Wann, Clement H.; Lin, Hau-Yu; Shen, Yi-Ling; Chung, Cheng-Ting; Huang, Shih-Chiang; Cheng, Chao-Ching; Changb, Chun-Yen |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment
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Yeh, M. -S.; Luo, G. -L.; Hou, F. -J.; Sung, P. -J.; Wang, C. -J.; Su, C. -J.; Wu, C. -T.; Huang, Y. -C.; Hong, T. -C.; Chao, T. -S.; Chen, B. -Y.; Chen, K. -M.; Wu, Y. -C.; Izawa, M.; Miura, M.; Morimoto, M.; Ishimura, H.; Lee, Y. -J.; Wu, W. -F.; Yeh, W. -K. |
| 臺大學術典藏 |
2020-06-16T06:33:18Z |
Ge gate-all-around FETs on Si
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Liu, C.W.;Wong, I.-H.;Chen, Y.-T.;Tu, W.-H.;Huang, S.-H.;Hsu, S.-H.; Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; Hong, M; MINGHWEI HONG |
| 國立臺灣大學 |
2012 |
Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
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Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M. |
顯示項目 446116-446125 / 2348973 (共234898頁)
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