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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2022-03-22T08:27:37Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:27:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:38Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:30:46Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:48Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:30:36Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN
臺大學術典藏 2021-09-21T23:19:32Z Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN
臺大學術典藏 2022-03-22T08:27:37Z Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:30:36Z Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN
臺大學術典藏 2022-03-22T08:30:38Z Atomic layer deposited TiO2 films on an equiatomic NiTi shape memory alloy for biomedical applications Abbas A;Hung H.-Y;Lin P.-C;Yang K.-C;Chen M.-C;Lin H.-C;Han Y.-Y.; Abbas A; Hung H.-Y; Lin P.-C; Yang K.-C; Chen M.-C; Lin H.-C; Han Y.-Y.; HSIN-CHIH LIN

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