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Showing items 379186-379210 of 2349123 (93965 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:12:50Z |
Electrical properties and fatigue behaviors of ZrO(2) resistive switching thin films
|
Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Electrical properties and fatigue behaviors of ZrO2 resistive switching thin films
|
Lin, Chih-Yang; Wang, Sheng-Yi; Lee, Dai-Ying; Tseng, Tseung-Yuen |
| 國立臺灣科技大學 |
2007 |
Electrical properties and Grain Growth Kinetics of PZN-based Ceramics Using Microwave Sintering
|
Li Chen-liang;M.B.Surch;Chou Chen-Chia |
| 元智大學 |
2017 |
Electrical Properties and Hydrogen Flux performance of Sr(Ce0.6Zr0.4)1-xYxO3 Ceramic Proton Conductors
|
I-M. Hung; Yen-Juin Chiang; Yi-Hung Wang; Jason S.C. Jang; Sheng-Wei Lee |
| 元智大學 |
2017-11-05 |
Electrical Properties and Hydrogen Flux Performance of Sr(Ce0.6Zr0.4)1−xYxO3−δ Ceramic Proton Conductors
|
I-M. Hung; Yen-Juin Chiang; Yi-Hung Wang; Jason S. C. Jang; Sheng-Wei Lee |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs
|
Chang, YH;Huang, ML;Chang, P;Lin, CA;Chu, YJ;Chen, BR;Hsu, CL;Kwo, J;Pi, TW;Hong, M; Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG |
| 東海大學 |
2011 |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
|
Chang, Y.H., Huang, M.L., Chang, P., Lin, C.A., Chu, Y.J., Chen, B.R., Hsu, C.L., Kwo, J. , Pi, T.W., Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
|
Chang, Y.H.;Huang, M.L.;Chang, P.;Lin, C.A.;Chu, Y.J.;Chen, B.R.;Hsu, C.L.;Kwo, J.;Pi, T.W.;Hong, M.; Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG |
| 國立臺灣師範大學 |
2019-09-03T12:14:22Z |
Electrical Properties and Leakage Current Mechanism of Y2O3 Gate Dielectrics
|
李洹; Huan Lee |
| 國立臺灣科技大學 |
2013 |
Electrical Properties and Microstructure of Undoped and Doped Cu(In,Ga)Se2 Bulk Materials
|
MONSEFI, MEHRDAD |
| 國立臺灣科技大學 |
2002 |
Electrical properties and microstructures of PbZrTiO3 thin films prepared by Laser Annealing Techniques
|
Chou, C.F.; Pan, H.C.; Chou, C.C. |
| 國立成功大學 |
2001-11-15 |
Electrical properties and modeling of ultrathin impurity-doped silicon dioxides
|
Chang, Wai-Jyh; Houng, Mau-Phon; Wang, Yeong-Her |
| 國立交通大學 |
2014-12-08T15:23:55Z |
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
|
Yao, I-Chuan; Lin, Pang; Huang, Sheng-He; Tseng, Tseung-Yuen |
| 國立成功大學 |
2012-01-15 |
Electrical properties and temperature behavior of ZnO-doped PZT-PMnN modified piezoelectric ceramics and their applications on therapeutic transducers
|
Tsai, Cheng-Che; Hong, Cheng-Shong; Shih, Chia-Chi; Chu, Sheng-Yuan |
| 國立高雄師範大學 |
2012 |
Electrical properties and temperature behavior of ZnO-doped PZT–PMnN modified piezoelectric ceramics and their applications on therapeutic transducers
|
Cheng-Shong Hong;C. C. Tsai;C. C. Shih;S. Y. Chug; 洪群雄 |
| 國立交通大學 |
2014-12-08T15:02:29Z |
Electrical properties in arsenic-ion-implanted GaAs
|
Chen, WC; Chang, CS |
| 國立交通大學 |
2019-04-02T05:58:31Z |
Electrical properties in arsenic-ion-implanted GaAs
|
Chen, WC; Chang, CS |
| 國立成功大學 |
2012-04 |
Electrical properties of (La0.9Ca0.1)(Co1-xNix)O3-delta cathode materials for SOFCs
|
Hsieh, T. H.; Jhong, F. H.; Ray, D. T.; Fu, Y. P. |
| 國立臺灣大學 |
1998 |
Electrical properties of a charged surface in a general electrolyte solution
|
Kuo, Yung-Chih; Hsu, Jyh-Ping |
| 國立東華大學 |
2008-05 |
Electrical properties of A/B-site substituted Ni-deficient La(Ni0.6Fe0.3)O3 perovskites with A=Ag+, Pb2+, Nd3+ and B=Mn3+, Ga3+
|
Chou, C. Y.; N. Kaurav; Y. K. Kuo; D.H. Kuo |
| 國立臺灣科技大學 |
2008 |
Electrical properties of AB -site substituted Ni-deficient la (Ni 0.6 Fe0.3) O3 perovskites with A= Ag+, Pb 2+, Nd3+ and B= Mn3+, Ga3+
|
Chou, C.-Y.;Kaurav, N.;Kuo, Y.-K.;Kuo, D.-H. |
| 國立成功大學 |
2009-02 |
Electrical Properties of Al/HfO2/n-GaN Prepared by Reactive Sputtering Method
|
Shih, Chuan-Feng; Li, Wei-Min; Shu, Shu-Chun; Hsiao, Chu-Yun; Hung, Kuang-Teng |
| 義守大學 |
2002-05 |
Electrical properties of Al2O3- and MnO2-doped thick film resistors on AlN substrates
|
Lih-Shan Chen;Shen-Li Fu;Jun-Hong Wu |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
|
Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立成功大學 |
2014-04 |
Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors
|
Li, Chih-Wei; Chang, Sheng-Po; Chang, Shoou-Jinn |
Showing items 379186-379210 of 2349123 (93965 Page(s) Totally)
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