| 國立臺灣師範大學 |
2019-09-03T12:14:22Z |
Electrical Properties and Leakage Current Mechanism of Y2O3 Gate Dielectrics
|
李洹; Huan Lee |
| 國立臺灣科技大學 |
2013 |
Electrical Properties and Microstructure of Undoped and Doped Cu(In,Ga)Se2 Bulk Materials
|
MONSEFI, MEHRDAD |
| 國立臺灣科技大學 |
2002 |
Electrical properties and microstructures of PbZrTiO3 thin films prepared by Laser Annealing Techniques
|
Chou, C.F.; Pan, H.C.; Chou, C.C. |
| 國立成功大學 |
2001-11-15 |
Electrical properties and modeling of ultrathin impurity-doped silicon dioxides
|
Chang, Wai-Jyh; Houng, Mau-Phon; Wang, Yeong-Her |
| 國立交通大學 |
2014-12-08T15:23:55Z |
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
|
Yao, I-Chuan; Lin, Pang; Huang, Sheng-He; Tseng, Tseung-Yuen |
| 國立成功大學 |
2012-01-15 |
Electrical properties and temperature behavior of ZnO-doped PZT-PMnN modified piezoelectric ceramics and their applications on therapeutic transducers
|
Tsai, Cheng-Che; Hong, Cheng-Shong; Shih, Chia-Chi; Chu, Sheng-Yuan |
| 國立高雄師範大學 |
2012 |
Electrical properties and temperature behavior of ZnO-doped PZT–PMnN modified piezoelectric ceramics and their applications on therapeutic transducers
|
Cheng-Shong Hong;C. C. Tsai;C. C. Shih;S. Y. Chug; 洪群雄 |
| 國立交通大學 |
2014-12-08T15:02:29Z |
Electrical properties in arsenic-ion-implanted GaAs
|
Chen, WC; Chang, CS |
| 國立交通大學 |
2019-04-02T05:58:31Z |
Electrical properties in arsenic-ion-implanted GaAs
|
Chen, WC; Chang, CS |
| 國立成功大學 |
2012-04 |
Electrical properties of (La0.9Ca0.1)(Co1-xNix)O3-delta cathode materials for SOFCs
|
Hsieh, T. H.; Jhong, F. H.; Ray, D. T.; Fu, Y. P. |
| 國立臺灣大學 |
1998 |
Electrical properties of a charged surface in a general electrolyte solution
|
Kuo, Yung-Chih; Hsu, Jyh-Ping |
| 國立東華大學 |
2008-05 |
Electrical properties of A/B-site substituted Ni-deficient La(Ni0.6Fe0.3)O3 perovskites with A=Ag+, Pb2+, Nd3+ and B=Mn3+, Ga3+
|
Chou, C. Y.; N. Kaurav; Y. K. Kuo; D.H. Kuo |
| 國立臺灣科技大學 |
2008 |
Electrical properties of AB -site substituted Ni-deficient la (Ni 0.6 Fe0.3) O3 perovskites with A= Ag+, Pb 2+, Nd3+ and B= Mn3+, Ga3+
|
Chou, C.-Y.;Kaurav, N.;Kuo, Y.-K.;Kuo, D.-H. |
| 國立成功大學 |
2009-02 |
Electrical Properties of Al/HfO2/n-GaN Prepared by Reactive Sputtering Method
|
Shih, Chuan-Feng; Li, Wei-Min; Shu, Shu-Chun; Hsiao, Chu-Yun; Hung, Kuang-Teng |
| 義守大學 |
2002-05 |
Electrical properties of Al2O3- and MnO2-doped thick film resistors on AlN substrates
|
Lih-Shan Chen;Shen-Li Fu;Jun-Hong Wu |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
|
Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立成功大學 |
2014-04 |
Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors
|
Li, Chih-Wei; Chang, Sheng-Po; Chang, Shoou-Jinn |
| 臺大學術典藏 |
2022-08-09T03:50:38Z |
Electrical properties of annealed MPCVD grown vertically aligned carbon nanotube films
|
Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; LI-CHYONG CHEN |
| 國立中山大學 |
1996-09 |
Electrical properties of Antimonide-Arsenide quantum wells
|
Ikai Lo |
| 南台科技大學 |
2007 |
Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 Thin Films Deposited by RF-Magnetron Sputtering
|
鄒文正; Wen-Cheng Tzou; K.H.Chen; C.F.Yang; C.C.Li |
| 國立成功大學 |
2018-08 |
Electrical properties of CdS/Cu(In,Ga)Se-2 interface
|
Li;Jian, V.;Mansfield;Lorelle, M.;Egaas;Brian;Ramanathan;Kannan |
| 國立成功大學 |
2018 |
Electrical properties of CdS/Cu(In,Ga)Se2 interface
|
Li, J.V.;Mansfield, L.M.;Egaas, B.;Ramanathan, K. |
| 國立交通大學 |
2019-04-02T06:04:28Z |
Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2
|
Lu, Peng; Ho, Yen Teng; Chu, Yung-Ching; Zhang, Ming; Chien, Po-Yen; Luong, Tien-Tung; Chang, Edward Yi; Woo, Jason C. S. |
| 國立成功大學 |
2009-03-20 |
Electrical properties of copper and titanium-codoped zinc ferrites
|
Hsiang, Hsing-I; Liu, Yi-Lang |
| 國立交通大學 |
2014-12-08T15:03:01Z |
Electrical properties of diamond films grown at low temperature
|
Chen, CF; Chen, SH; Lin, KM |
