| 國立臺灣科技大學 |
2008 |
Electrical properties of AB -site substituted Ni-deficient la (Ni 0.6 Fe0.3) O3 perovskites with A= Ag+, Pb 2+, Nd3+ and B= Mn3+, Ga3+
|
Chou, C.-Y.;Kaurav, N.;Kuo, Y.-K.;Kuo, D.-H. |
| 國立成功大學 |
2009-02 |
Electrical Properties of Al/HfO2/n-GaN Prepared by Reactive Sputtering Method
|
Shih, Chuan-Feng; Li, Wei-Min; Shu, Shu-Chun; Hsiao, Chu-Yun; Hung, Kuang-Teng |
| 義守大學 |
2002-05 |
Electrical properties of Al2O3- and MnO2-doped thick film resistors on AlN substrates
|
Lih-Shan Chen;Shen-Li Fu;Jun-Hong Wu |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures
|
Tai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC |
| 國立成功大學 |
2014-04 |
Electrical Properties of Amorphous Zinc-Indium-Tin Oxide Semiconductor Thin-Film Transistors
|
Li, Chih-Wei; Chang, Sheng-Po; Chang, Shoou-Jinn |
| 臺大學術典藏 |
2022-08-09T03:50:38Z |
Electrical properties of annealed MPCVD grown vertically aligned carbon nanotube films
|
Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; Huang B.R.; Huang C.S.; Wu C.C.; Chen L.-C.L.; Chen K.H.; LI-CHYONG CHEN |
| 國立中山大學 |
1996-09 |
Electrical properties of Antimonide-Arsenide quantum wells
|
Ikai Lo |
| 南台科技大學 |
2007 |
Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1Ti0.9)O3 Thin Films Deposited by RF-Magnetron Sputtering
|
鄒文正; Wen-Cheng Tzou; K.H.Chen; C.F.Yang; C.C.Li |
| 國立成功大學 |
2018-08 |
Electrical properties of CdS/Cu(In,Ga)Se-2 interface
|
Li;Jian, V.;Mansfield;Lorelle, M.;Egaas;Brian;Ramanathan;Kannan |
| 國立成功大學 |
2018 |
Electrical properties of CdS/Cu(In,Ga)Se2 interface
|
Li, J.V.;Mansfield, L.M.;Egaas, B.;Ramanathan, K. |
| 國立交通大學 |
2019-04-02T06:04:28Z |
Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2
|
Lu, Peng; Ho, Yen Teng; Chu, Yung-Ching; Zhang, Ming; Chien, Po-Yen; Luong, Tien-Tung; Chang, Edward Yi; Woo, Jason C. S. |
| 國立成功大學 |
2009-03-20 |
Electrical properties of copper and titanium-codoped zinc ferrites
|
Hsiang, Hsing-I; Liu, Yi-Lang |
| 國立交通大學 |
2014-12-08T15:03:01Z |
Electrical properties of diamond films grown at low temperature
|
Chen, CF; Chen, SH; Lin, KM |
| 國立交通大學 |
2014-12-08T15:44:14Z |
Electrical properties of diamond-like carbon films deposited using a filtered cathodic arc system
|
Li, YW; Chen, CF; Tseng, YJ |
| 國立臺灣科技大學 |
2002 |
Electrical Properties of Ferroelectric PbSrTiO3 Films on Stainless Steel Substrates With LaSrMnO3 Buffer Layers
|
Han-Chang Pan;Jiun-Nan Sheng;Chen-Chia Chou;Hsiu-Fung Cheng |
| 國立中山大學 |
2004 |
Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition
|
M.K. Lee; C.M. Shih; S.Y. Lin; C.D. Yang; T.H. Shih |
| 國立成功大學 |
2006-11 |
Electrical properties of fluorine-doped silicon-oxycarbide dielectric barrier for copper interconnect
|
Huang, Chun-Chieh; Huang, Jow-Lay; Wang, Ying-Lang; Chang, Juin-Jie |
| 國立成功大學 |
2003-02-28 |
Electrical properties of GaAs metal-oxide-semiconductor structures with the oxide layer grown by liquid phase chemical-enhanced method
|
Chou, Dei-Wei; Wang, Hwei-Heng; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立交通大學 |
2014-12-08T15:38:42Z |
Electrical properties of GaSe doped with Er
|
Hsu, YK; Chang, CS; Huang, WC |
| 國立臺灣大學 |
1990 |
Electrical Properties of Glass Microelectrodes with Different Tip Diameters
|
Shaw, F. Z.; Tsao, H. W.; 嚴震東; Shaw, F. Z.; Tsao, H. W.; Yen, Chen-Tung |
| 中國文化大學 |
2016-05 |
Electrical Properties of HeLa Cells Based on Scalable 3D Interdigital Electrode Array
|
Chang, FY (Chang, Fu-Yu); Chen, MK (Chen, Ming-Kun); Wang, MH (Wang, Min-Haw); Jang, LS (Jang, Ling-Sheng) |
| 國立成功大學 |
2016-05 |
Electrical Properties of HeLa Cells Based on Scalable 3D Interdigital Electrode Array
|
Chang, Fu-Yu; Chen, Ming-Kun; Wang, Min-Haw; Jang, Ling-Sheng |
| 國立交通大學 |
2014-12-08T15:12:38Z |
Electrical properties of high-kappa praseodymium oxide polycrystalline silicon thin-film transistors with nitrogen implantation
|
Deng, Chih-Kang; Chang, Hong-Ren; Chiou, Bi-Shiou |
| 東海大學 |
1992 |
Electrical properties of high-temperature annealed boron-implanted Hg0.7Cd0.3Te
|
Lam, Kai-Yuen, Gong, Jeng, Wu, Tai-Bon, Lou, Jen-Chung |
| 國立成功大學 |
2018-11 |
Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors
|
Cheng;Tien-Hung;Chang;Sheng-Po;Chang;Shoou-Jinn |
