|
|
???tair.name??? >
???browser.page.title.title???
|
Showing items 379241-379265 of 2349123 (93965 Page(s) Totally)
<< < 15165 15166 15167 15168 15169 15170 15171 15172 15173 15174 > >>
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:10:33Z |
Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
|
Hsieh, Ming-Ta; Chen, Jenn-Fang; Yen, Kuo-Hsi; Zan, Hsiao-Wen; Chang, Chan-Ching; Chen, Chih-Hsien; Shih, Ching-Chieh; Lee, Yeong-Shyang |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Electrical properties of Mg/La, Mg/Nb co-doped (Ba0.7Sr0.3)TiO3 thin films prepared by metallo-organic deposition method
|
Chen, SY; Wang, HW; Huang, LC |
| 中原大學 |
2001-08 |
Electrical Properties of Mg/La, Mg/Nb Co-Doped (Ba0.7Sr0.3)TiO3 Thin Films Prepared by Metallo-Organic Deposition Method
|
San-Yuan Chen;Hong-Wen Wang;Li-Chi Huang |
| 國立臺灣海洋大學 |
1996-02 |
Electrical Properties of Microwave Sintered (Sr 0.4 Pb 0.6 )TiO 3 Ceramics
|
Horng-Yi Chang;Kuo-Shung Liu;Chen-Ti Hu;I-Nan Lin |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures
|
Chin, H-A;Cheng, I-C;Li, C-K;Wu, Y-R;Chen, J. Z.;Lu, W-S;Lee, W-L; Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG; JIAN-ZHANG CHEN; YUH-RENN WU |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Electrical properties of multiple high-dose Si implantation in p-GaN
|
Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY |
| 國立彰化師範大學 |
2005-01 |
Electrical Properties of Ni/Au and Au Contacts on p-type GaN
|
Lin, Yow-Jon |
| 國立交通大學 |
2014-12-08T15:01:10Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
| 國立交通大學 |
2019-04-02T05:59:33Z |
Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
|
Tsai, MS; Sun, SC; Tseng, TY |
| 東方設計學院 |
2009-09-01 |
Electrical properties of p-ZnO/n-Si heterjunction formed by RF magnetron sputter
|
Wu, Sean; Lee, Maw-Shung; Jhong, Shih-Bin; Liu, Kuan-Ting; Chang, Yee-Shin; Hsiao, Yu-Jen; 吳信賢; (東方技術學院電子與資訊系) |
| 中國文化大學 |
2007 |
Electrical properties of pressure quenched silicon by thermal spraying
|
Tan, S. Y.; Gambino, R. J.; Sampath, S.; Herman, H. |
| 國立彰化師範大學 |
2004-03 |
Electrical Properties of Pt Contacts on p-GaN Activated in Air
|
Lin, Yow-Jon; Wu, Kuo-Chen |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films
|
Lee, CJ; Huang, LT; Ezhilvalavan, S; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:17:04Z |
Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes
|
Liu, CY; Wang, A; Jang, WY; Tseng, TY |
| 國立臺灣科技大學 |
2017 |
Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105
|
Tuan, Tuan T.T.A;Kuo, D.-H;Saragih, A.D;Li, G.-Z. |
| 國立交通大學 |
2014-12-08T15:43:51Z |
Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
|
Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:33:54Z |
Electrical properties of SiGe nanowire following fluorine/nitrogen plasma treatment
|
Chang, Kow-Ming; Chen, Chu-Feng; Lai, Chiung-Hui; Kuo, Po-Shen; Chen, Yi-Ming; Chang, Tai-Yuan |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
|
Chang, KM; Cheng, CC; Lang, CC |
| 國立交通大學 |
2014-12-08T15:09:35Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, Hui-Hsin; Lin, Chia-Yu; Hsiao, Tzu-Chien; Fang, Yueh-Yuan; Ho, Kuo-Chuan; Yang, Dongfang; Lee, Chih-Kung; Hsu, Su-Ming; Lin, Chii-Wann |
| 國立臺灣大學 |
2009-04 |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, HH; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CW |
| 臺大學術典藏 |
2018-09-10T07:29:42Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Lu, HH;Lin, CY;Hsiao, TC;Fang, YY;Ho, KC;Yang, DF;Lee, CK;Hsu, SM;Lin, CW; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CWLu, H.-H.; Lin, C.-Y.; Hsiao, T.-C.; Fang, Y.-Y.; Ho, K.-C.; Yang, D.; Lee, C.-K.; Hsu, S.-M.; Lin, C.-W.; Lu, HH; Lin, CY; Hsiao, TC; Fang, YY; Ho, KC; Yang, DF; Lee, CK; Hsu, SM; Lin, CW; CHII-WANN LIN; KUO-CHUAN HO |
| 臺大學術典藏 |
2020-04-28T07:12:18Z |
Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas
|
Yang, D.; Lee, C.-K.; Hsu, S.-M.; Lin, C.-W.; CHIH-KUNG LEE; Lu, H.-H.;Lin, C.-Y.;Hsiao, T.-C.;Fang, Y.-Y.;Ho, K.-C.;Yang, D.;Lee, C.-K.;Hsu, S.-M.;Lin, C.-W.; Lu, H.-H.; Lin, C.-Y.; Hsiao, T.-C.; Fang, Y.-Y.; Ho, K.-C. |
| 國立高雄師範大學 |
2003 |
Electrical Properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure
|
Jung-Hui Tsai;King-Poul Zhu; 蔡榮輝 |
| 大葉大學 |
2006-12 |
Electrical properties of SiO2/n-GaN metal oxide semiconductor with Liquid-Phase-Deposition Oxide
|
Hwang, Jun-Dar;Lin, T. C. |
Showing items 379241-379265 of 2349123 (93965 Page(s) Totally)
<< < 15165 15166 15167 15168 15169 15170 15171 15172 15173 15174 > >>
View [10|25|50] records per page
|
