臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
國立交通大學	2017-04-21T06:49:22Z	Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator	Lin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.
國立交通大學	2018-08-21T05:54:21Z	Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application	Lin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi
臺大學術典藏	2018-09-10T14:57:40Z	Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer	Liang-Yu Su;Finella Lee;Jian Jang Huang; Liang-Yu Su; Finella Lee; Jian Jang Huang; JIAN-JANG HUANG
國立交通大學	2014-12-16T06:15:18Z	ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF	CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN
國立交通大學	2014-12-16T06:15:05Z	ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF	CHANG EDWARD YI; Chang Chia-Hua; Lin Yueh-Chin
元智大學	Aug-22	Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer	李清庭; P. Y. Tsai; H. T. N. Nguyen; V. Nagarajan; C. H. Lin; C. F. Dee; S. C. Chen; H. C. Kuo; E. Y. Chang
國立成功大學	2004-05	Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor	Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan
義守大學	2015-01	Enhancement-mode In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with sol–gel processed gate dielectrics	Chih-Chun Hu;Cheng-En Wu;Hsien-Cheng Lin;Kuan-Wei Lee;Yeong-Her Wang
國立成功大學	2020-07	Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension	Huang;Yi-Ping;Lee;Ching-Sung;Hsu;Wei-Chou
國立中山大學	2006-12	Enhancement-mode MOSFETs with TiO2 as gate oxides prepared by MOCVD on Si and LPD on InP treated with (NH4)2Sx	M.K. Lee;C.F. Yen;S.H. Lin

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