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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:36:34Z	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer	Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin
國立交通大學	2019-04-02T06:00:51Z	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer	Hsieh, Ting-En; Chang, Edward Yi; Song, Yi-Zuo; Lin, Yueh-Chin; Wang, Huan-Chung; Liu, Shin-Chien; Salahuddin, Sayeef; Hu, Chenming Calvin
國立交通大學	2015-12-04T07:03:12Z	GATE STRUCTURE	CHANG Yi; KUO Chien-I; HSU Heng-Tung
國立成功大學	2017	Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT	Liu, H.-Y.;Lee, C.-S.;Lin, C.-W.;Chiang, M.-H.;Hsu, W.-C.
國立交通大學	2014-12-16T06:16:19Z	Gate structure of metal oxide semiconductor field effect transistor	Bing-Yue, Tsui; Chih-Feng, Huang
國立交通大學	2019-04-03T06:43:59Z	Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film	Chiu, Shao-Pin; Yamanouchi, Michihiko; Oyamada, Tatsuro; Ohta, Hiromichi; Lin, Juhn-Jong
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
國立高雄師範大學	2010	Gate voltage swing enhancement of an InGaP/InGaAs pseudomorphic HFET with low-to-high double doping channels	Jung-Hui Tsai;Wen-Shiung Lour;Chia-Hua Huang;Sheng-Shiun Ye;Yung-Chun Ma; 蔡榮輝
國立臺灣海洋大學	2010-10-28	Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels	J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma

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