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Showing items 726771-726795 of 2348973 (93959 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
|
Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立臺灣科技大學 |
2017 |
Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScOx Films Doped with Nb and Zn
|
Wang, S.-F;Hsu, C.-C;Chu, J.P;Liu, Y.-X;Chen, L.-W. |
| 國立高雄應用科技大學 |
2013-02 |
Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory
|
劉志益; Liu, Chih-Yi;Huang, Jyun-Jie;Lai, Chun-Hung |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
|
Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
|
Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2023-11-10 |
Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation
|
Wafee;Seema;Leu;Ching-Chich;Chen;-Wen, Yu;Liu;Haochih, Bernard |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
|
Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
|
Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2022-04-5 |
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
|
Tseng;Hsiao-Ting;Hsu;Tsung-Hsien;Tsai;Meng-Hung;Huang;Chi-Yuen;Huang;Cheng-Liang |
| 國立成功大學 |
2022-03 |
Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications
|
Wu;You-Shen;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 國立成功大學 |
2016-06 |
Resistive switching characteristics of sputtered AlN thin films
|
Tseng, Zong-Liang;Chen, Lung-Chien;Li, Wan-Ying;Chu, Sheng-Yuan |
| 國立東華大學 |
2009-11 |
Resistive switching characteristics of Ti/CuO/Pt memory devices
|
林群傑; Lin, Chun-Chieh; Wang, Sheng-Yu ; Huang, Chih-Wen ; Lee, Dai-Ying; Lin, Chih-Yang ;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
|
Pan, Tung-Ming; Lu, Chih-Hung; Mondal, Somnath; Ko, Fu-Hsiang |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
|
Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2007 |
Resistive switching effects in Nd0.7Ca0.3MnO3 manganite
|
Hsu, D.; Lin, J. G.; Wu, W. F. |
| 國立東華大學 |
2007-11 |
Resistive switching in V-doped SrZrO3 thin film for RRAM applications
|
林群傑; Lin, Chun-Chieh; Jan Shih-Wei ; Lin Meng-Han; Yu, Jung-Sheng ;Tseng, Tseung-Yuen |
| 國立成功大學 |
2016-04 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
Showing items 726771-726795 of 2348973 (93959 Page(s) Totally)
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