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Showing items 750241-750265 of 2349123 (93965 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:12:53Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics
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Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:11Z |
Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric
|
Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric
|
Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics
|
Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2010 |
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics
|
Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics
|
Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process
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Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:18Z |
Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process
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Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:47:34Z |
Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm
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Gan, K.-G.; Shi, J.-W.; Chiu, Y.-J.; Sun, C.-K.; Bowers, J.E.; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T06:30:22Z |
Self-aligned nanocrystalline silicon thin-film transistor with deposited n+ source/drain layer
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Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2008 |
Self-aligned nematic crystallization of poly(oxypropylene)amine intercalated silicates on toluene/water interface
|
Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung; Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung |
| 國立臺灣大學 |
2008 |
Self-aligned nematic crystallization of poly(oxypropylene)amine intercalated silicates on toluene/water interface
|
Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Self-aligned platinum-silicide nanowires for biomolecule sensing
|
Ko, FH; Yeh, ZH; Chen, CC; Liu, TF |
| 國立中山大學 |
2009-05 |
Self-Aligned Silicon-On-Insulator MOSFETs with Ω-Shaped Conductive Layer
|
Tzu-Feng Chang;Jyi-Tsong Lin;Yi-Chuen Eng;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu;Hsuan-Hsu Chen;Chih-Hao Kuo |
| 國立中山大學 |
2009-04 |
Self-Aligned Silicon-On-Insulator Transistors with Ω-Shaped Conductive Layer and Source/Drain-Tie: A Simulation Study
|
Tzu-Feng Chang;Jyi-Tsong Lin;Yi-Chuen Eng;Chih-Hao Kuo;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu;Hsuan-Hsu Chen |
| 國立中山大學 |
2009-07 |
Self-Aligned SOI MOSFETs with Ω-Shaped Conductive Layer and Source/Drain-Tie
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Jyi-Tsong Lin;Tzu-Feng Chang;Yi-Chuen Eng;Hsuan-Hsu Chen;Chih-Hao Kuo;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu |
| 國立臺灣大學 |
2007 |
Self-aligned stylus with high sphericity for micro coordinate measurement
|
Tsai, Yao-Chuan; Chang, D.R.; Tsao, L.C.; Wu, Ming-Dao; Shih, Po-Jen; Shih, Wen-Pin |
| 臺大學術典藏 |
2020-02-26T01:36:50Z |
Self-aligned stylus with high sphericity for micro coordinate measurement
|
Tsai, Y.-C.;Chang, D.-R.;Tsao, L.-C.;Wu, M.-D.;Shih, P.-J.;Shih, W.-P.;Po-Jen Shih; Tsai, Y.-C.; Chang, D.-R.; Tsao, L.-C.; Wu, M.-D.; Shih, P.-J.; Shih, W.-P.; PO-JEN SHIH |
| 國立交通大學 |
2014-12-08T15:16:52Z |
Self-aligned tantalum oxide nanodot arrays through anodic alumina template
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Wu, CT; Ko, FH; Hwang, HY |
| 臺大學術典藏 |
2020-06-11T06:16:01Z |
Self-aligned top-gate amorphous In-Ga-Zn-O thin film transistors
|
Wu, C.-H.;Hsieh, H.-H.;Wu, C.-C.; Wu, C.-H.; Hsieh, H.-H.; Wu, C.-C.; CHUNG-CHIH WU |
Showing items 750241-750265 of 2349123 (93965 Page(s) Totally)
<< < 30005 30006 30007 30008 30009 30010 30011 30012 30013 30014 > >>
View [10|25|50] records per page
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