| 臺大學術典藏 |
2018-09-10T14:52:58Z |
Resistive memory of single SnO2 nanowire based switchable diodes
|
Nieh, C.H.; Lu, M.L.; Weng, T.M.; Chen, Y.F.; YANG-FANG CHEN |
| 國立臺灣大學 |
1989 |
Resistive modeling of periodically perforated mesh planes inmultilayer packaging structures
|
Wu, Ruey-Beei |
| 國立臺灣科技大學 |
2019 |
Resistive open defect detection in SoCs by a test method based on injected charge volume after test input application
|
Matsumoto, Y.;Hashizume, M.;Yotsuyanagi, H.;Lu, S.-K. |
| 國立臺灣科技大學 |
2017 |
Resistive open defects detected by interconnect testing based on charge volume injected to 3D ICs
|
Ohtani, K.;Osato, N.;Hashizume, M.;Yotsuyanagi, H.;Lu, S.-K. |
| 國立交通大學 |
2018-08-21T05:53:09Z |
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
|
Chen, Hong-Yu; Brivio, Stefano; Chang, Che-Chia; Frascaroli, Jacopo; Hou, Tuo-Hung; Hudec, Boris; Liu, Ming; Lv, Hangbing; Molas, Gabriel; Sohn, Joon; Spiga, Sabina; Teja, V. Mani; Vianello, Elisa; Wong, H. -S. Philip |
| 國立交通大學 |
2014-12-16T06:13:49Z |
Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same
|
Chin Albert; Cheng Chun-Hu |
| 國立交通大學 |
2014-12-16T06:14:59Z |
RESISTIVE RANDOM ACCESS MEMORY (RRAM) USING STACKED DIELECTRICS AND METHOD FOR MANUFACTURING THE SAME
|
Chin Albert; Cheng Chun-Hu |
| 國立交通大學 |
2014-12-16T06:13:48Z |
Resistive random access memory device and operating method thereof
|
Liu Po-Tsun; Hsu Ching-Hui; Fan Yang-Shun |
| 國立交通大學 |
2014-12-16T06:14:48Z |
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND OPERATING METHOD THEREOF
|
LIU Po-Tsun; HSU Ching-Hui; FAN Yang-Shun |
| 國立交通大學 |
2014-12-08T15:01:55Z |
Resistive response to a microwave field in high temperature superconducting crystals
|
Wu, CJ; Tseng, TY |
| 國立聯合大學 |
2010 |
Resistive switching and current conduction for thermally grown NiO thin film
|
C.H. Lai, C.H. Chen and C.Y. Liu |
| 國立交通大學 |
2015-07-21T08:31:27Z |
Resistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layers
|
Tsai, Tsung-Ling; Wu, Jia-Woei; Tseng, Tseng-Yuen |
| 國立成功大學 |
2011-07 |
Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide
|
Wu, Wei-Ting; Wu, Jih-Jen; Chen, Jen-Sue |
| 國立成功大學 |
2014-04-23 |
Resistive Switching Behavior in Gelatin Thin Films for Nonvolatile Memory Application
|
Chang, Yu-Chi; Wang, Yeong-Her |
| 國立暨南國際大學 |
2014 |
Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications
|
Mondal, S |
| 國立臺灣科技大學 |
2012 |
Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content
|
Chang, W.Z.;Chu, J.P.;Wang, S.F. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
|
Singh, Pragya; Simanjuntak, Firman Mangasa; Kumar, Amit; Tseng, Tseung-Yuen |
| 國立成功大學 |
2020-06 |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods
|
Su;Tzu-Han;Lee;Ke-Jing;Wang;Li-Wen;Chang;Yu-Chi;Wang;Yeong-Her |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Resistive switching behavior of sol-gel deposited TiO2 thin films under different heating ambience
|
Lai, Chun-Hung; Chen, Chia-Hung; Tseng, Tseung-Yuen |
| 國立東華大學 |
2006-10 |
Resistive switching behavior of SrZrO3-based films for nonvolatile memory application
|
林群傑; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立成功大學 |
2014-11 |
Resistive Switching Behaviors of Sol-Gel-Derived MgNb2O6 Thin Films on ITO/glass Substrate
|
Ho, Yi-Da; Chen, Kung-Rong; Huang, Cheng-Liang |
| 臺大學術典藏 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
|
Chang, Wen-Yuan;Lin, Chin-An;He, Jr-Hau;Wu, Tai-Bor; Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立臺灣大學 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
|
Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立成功大學 |
2014-02-04 |
Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
|
Wu, Chun-Shiang; Ho, Y.D; Huang, C.L |
| 國立成功大學 |
2023 |
Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications
|
Cheng, Cheng C.-R.;Tsai, M.-H.;Hsu, T.-H.;Li, M.-J.;Huang, C.-L. |
