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Showing items 726766-726790 of 2348973 (93959 Page(s) Totally)
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| 國立成功大學 |
2014-11 |
Resistive Switching Behaviors of Sol-Gel-Derived MgNb2O6 Thin Films on ITO/glass Substrate
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Ho, Yi-Da; Chen, Kung-Rong; Huang, Cheng-Liang |
| 臺大學術典藏 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
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Chang, Wen-Yuan;Lin, Chin-An;He, Jr-Hau;Wu, Tai-Bor; Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立臺灣大學 |
2010 |
Resistive switching behaviors of ZnO nanorod layers
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Chang, Wen-Yuan; Lin, Chin-An; He, Jr-Hau; Wu, Tai-Bor |
| 國立成功大學 |
2014-02-04 |
Resistive Switching Behaviour of Diode-like gadolinium oxide Resistive Random Access Memory
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Wu, Chun-Shiang; Ho, Y.D; Huang, C.L |
| 國立成功大學 |
2023 |
Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications
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Cheng, Cheng C.-R.;Tsai, M.-H.;Hsu, T.-H.;Li, M.-J.;Huang, C.-L. |
| 國立交通大學 |
2019-04-02T05:58:38Z |
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
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Lin, Chun-An; Dai, Guang-Jyun; Tseng, Tseung-Yuen |
| 國立臺灣科技大學 |
2017 |
Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScOx Films Doped with Nb and Zn
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Wang, S.-F;Hsu, C.-C;Chu, J.P;Liu, Y.-X;Chen, L.-W. |
| 國立高雄應用科技大學 |
2013-02 |
Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory
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劉志益; Liu, Chih-Yi;Huang, Jyun-Jie;Lai, Chun-Hung |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
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Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立臺灣科技大學 |
2016 |
Resistive switching characteristics of a spinel ZnAl2O4 thin film prepared by radio frequency sputtering
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Wang, S.-F;Tsai, Y.-T;Chu, J.P. |
| 國立交通大學 |
2014-12-08T15:29:55Z |
Resistive switching characteristics of gallium oxide for nonvolatile memory application
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Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn |
| 國立成功大學 |
2023-11-10 |
Resistive switching characteristics of methyl-ammonium lead iodide perovskite during atmosphere degradation
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Wafee;Seema;Leu;Ching-Chich;Chen;-Wen, Yu;Liu;Haochih, Bernard |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
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Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
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Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2019-04-02T05:59:03Z |
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
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Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立成功大學 |
2022-04-5 |
Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
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Tseng;Hsiao-Ting;Hsu;Tsung-Hsien;Tsai;Meng-Hung;Huang;Chi-Yuen;Huang;Cheng-Liang |
| 國立成功大學 |
2022-03 |
Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications
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Wu;You-Shen;Tsai;Meng-Hung;Huang;Cheng-Liang |
| 國立成功大學 |
2016-06 |
Resistive switching characteristics of sputtered AlN thin films
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Tseng, Zong-Liang;Chen, Lung-Chien;Li, Wan-Ying;Chu, Sheng-Yuan |
| 國立東華大學 |
2009-11 |
Resistive switching characteristics of Ti/CuO/Pt memory devices
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林群傑; Lin, Chun-Chieh; Wang, Sheng-Yu ; Huang, Chih-Wen ; Lee, Dai-Ying; Lin, Chih-Yang ;Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:24:17Z |
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
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Pan, Tung-Ming; Lu, Chih-Hung; Mondal, Somnath; Ko, Fu-Hsiang |
| 國立交通大學 |
2015-12-02T02:59:09Z |
Resistive Switching Characteristics of WO3/ZrO2 Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation
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Tsai, Tsung-Ling; Lin, Yu-Hsuan; Tseng, Tseung-Yuen |
Showing items 726766-726790 of 2348973 (93959 Page(s) Totally)
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