English  |  正體中文  |  简体中文  |  总笔数 :2856565  
造访人次 :  53432516    在线人数 :  694
教育部委托研究计画      计画执行:国立台湾大学图书馆
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
关于TAIR

浏览

消息

著作权

相关连结

跳至: [ 中文 ] [ 数字0-9 ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]
请输入前几个字:   

显示项目 615181-615190 / 2348973 (共234898页)
<< < 61514 61515 61516 61517 61518 61519 61520 61521 61522 61523 > >>
每页显示[10|25|50]项目

机构 日期 题名 作者
國立成功大學 2004-03 Nitride-based LEDs with textured side walls Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Ching-Ting; Lin, Y. C.; Lai, W. C.; Shei, Shih-Chang; Ke, J. C.; Lo, H. M.
國立成功大學 2005-08 Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L.
國立成功大學 2007-07-02 Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography Chang, Shoou-Jinn; Shen, C. F.; Chen, W. S.; Kuo, C. T.; Ko, T. K.; Shei, Shih-Chang; Sheu, Jinn-Kong
國立成功大學 2003-02 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Wu, Liang-Wen; Chen, Jone F.; Sheu, Jinn-Kong; Tsai, Ji-Ming
南台科技大學 2006-12 Nitride-based light emitting diodes with textured sidewalls and pillar waveguides C. F. Shen; S. J. Chang; T. K. Ko; C. T. Kuo; S. C. Shei; W. S. Chen; C. T. Lee; C. S. Chang;Y. Z. Chiou
國立成功大學 2006-11 Nitride-based light emitting diodes with textured sidewalls and pillar waveguides Shen, C. F.; Chang, Shoou-Jinn; Ko, T. K.; Kuo, C. T.; Shei, Shih-Chang; Chen, W. S.; Lee, Ching-Ting; Chang, C. S.; Chiou, Yu-Zung
國立成功大學 2008-05-01 Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures Ji, L. W.; Young, Sheng-Joue; Liu, C. H.; Water, W.; Meen, Teen-Hang; Jywe, W. Y.
臺大學術典藏 2022-05-24T06:26:44Z Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures Ji L.W.;Young S.J.;Liu C.H.;Water W.;Meen T.H.;Jywe W.Y.; Ji L.W.; Young S.J.; Liu C.H.; Water W.; Meen T.H.; Jywe W.Y.; Wen-Yuh Jywe
國立成功大學 2004-12 Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, S. C.; Chang, C. S.; Wu, L. W.
國立成功大學 2002-12 Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts Lin, Yi-Chao; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Chang, C. S.; Shei, Shih-Chang; Hsu, S. J.; Liu, Chun-Hsing; Liaw, U. H.; Chen, S. C.; Huang, Bohr-Ran

显示项目 615181-615190 / 2348973 (共234898页)
<< < 61514 61515 61516 61517 61518 61519 61520 61521 61522 61523 > >>
每页显示[10|25|50]项目