| 臺大學術典藏 |
2020-09-29T05:32:21Z |
Atomic layer deposited Al2O3 films on NiTi shape memory alloys for biomedical applications
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Chen M.-C.; Yang K.-C.; YIN-YI HAN; Lin H.-C.;Chang Y.-L.;Yin-Yi Han;Yang K.-C.;Chen M.-C.; Lin H.-C.; Chang Y.-L. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2022-03-22T08:27:37Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:38Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2022-03-22T08:30:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:48Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:36Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-09-21T23:19:32Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
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Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN |
