| 國立交通大學 |
2019-04-02T05:58:55Z |
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure
|
Chang, Tzu-Yueh; Cheng, You-Wei; Lee, Po-Tsung |
| 東方設計學院 |
2008-08 |
Electrical Characteristics of Bi1Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
陳開煌; Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2009 |
Electrical Characteristics of Bi4Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; 陳開煌; (東方技術學院電子與資訊系) |
| 國立交通大學 |
2014-12-08T15:49:20Z |
Electrical characteristics of CO2-sensitive diode based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
|
WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG |
| 國立彰化師範大學 |
1991-04 |
Electrical Characteristics of Double-barrier Resonant Tunneling Structures with Different Electrode Doping Concentrations
|
Wu, Jenq-Shinn; Chang, C. Y. ; Lee, C. P. ; Chang, K. H. ; Liu, D. G. |
| 國立交通大學 |
2017-04-21T06:48:37Z |
Electrical Characteristics of Flexible Organic Thin-film Transistors under Bending Conditions
|
Chen, Fang-Chung; Chen, Tzung-Da |
| 國立中山大學 |
2007-05 |
Electrical characteristics of fluorine passivated MOCVD-TiO2 film on (NH4)2Sx treated GaAs
|
M.K. Lee;C.F. Yen;T.H. Shih;C.L. Ho;H.C. Lee;H.F. Tu;C.H. Fan |
| 國立交通大學 |
2014-12-08T15:40:11Z |
Electrical characteristics of glucose-sensitive diode arrays based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
|
Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
|
Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Yeh, Chi-Ruei; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
|
Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立聯合大學 |
2004 |
Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2
|
胡振國, C.H. Chang, L.S. Lee, M.J. Tsai and J.G. Hwu |
| 國立交通大學 |
2019-04-03T06:38:47Z |
Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
|
Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立中山大學 |
2006 |
Electrical Characteristics of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang |
| 國立中山大學 |
2007 |
Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate
|
Ming-Kwei Lee; Jung-Jie Huang; Chih-Feng Yen |
| 國立交通大學 |
2014-12-08T15:40:32Z |
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
|
Chang, KM; Yang, WC; Tsai, CP |
| 國立中山大學 |
2005-11 |
Electrical Characteristics of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee;Chih-Feng Yen;Jung-Jie Huang |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:36:18Z |
Electrical characteristics of Ni Ohmic contact on n-type GeSn
|
Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W. |
| 國立交通大學 |
2014-12-08T15:45:55Z |
Electrical characteristics of polyoxide prepared by N-2 preannealing
|
Chang, KM; Lee, TC; Wang, JY |
| 國立中山大學 |
2006 |
Electrical characteristics of postmetallization-annealed MOCVD-TiO2 films on ammonium sulfide-treated GaAs
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang; Shi-Hao Lin |
| 國立中山大學 |
2007 |
Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
|
Ming-Kwei Lee; Hung-Chang Lee; Zhen-Hui Lee |
| 國立交通大學 |
2014-12-08T15:04:37Z |
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
|
WU, SL; LIN, TY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
|
Chen, Yung-Yu; Fu, Wen-Yu; Yeh, Ching-Fa |
| 國立交通大學 |
2014-12-08T15:43:27Z |
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
|
Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE
|
TSAI, MJ; WANG, PW; SU, HP; CHENG, HC |
| 國立臺灣大學 |
2004 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立聯合大學 |
2004 |
Electrical Characteristics of Ultra-thin Gate Oxides (<3nm) Prepared by Direct Current Superposed with Alternating-current Anodization
|
胡振國, Z.H.Chen, S.W.Huang, and J.G.Hwu |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
|
Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 國立中山大學 |
2002 |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing
|
T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
|
Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:04:21Z |
ELECTRICAL CHARACTERISTICS OF WO3-BASED CO2-SENSITIVE SOLID-STATE MICROSENSOR
|
CHAO, S |
| 國立交通大學 |
2014-12-08T15:32:15Z |
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
|
Lin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi |
| 國立臺灣大學 |
2003 |
Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立交通大學 |
2014-12-08T15:20:45Z |
Electrical characterization and Raman spectroscopy of individual vanadium pentoxide nanowire
|
Shen, W. -J.; Sun, K. W.; Lee, C. S. |
| 國立中山大學 |
1997 |
Electrical characterization and signal integrity of ball grid array packages
|
T.S. Horng;S.M. Wu;M.J. Kuo |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
|
Shiu, Jin-Yu; Lu, Chung-Yu; Su, Ting-Yi; Huang, Rong-Tan; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi |
| 國立臺灣海洋大學 |
2010-02 |
Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
|
Jin-Yu Shiu; Chung-Yu Lu; Ting-Yi Su; R. T. Huang; Herbert Zirath; Niklas Rorsman; Edward Yi Chang |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:46:38Z |
Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and Al
|
Liao, CC; Chin, A; Tsai, C |
| 國立交通大學 |
2019-04-02T05:58:46Z |
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 臺大學術典藏 |
2018-09-10T04:53:28Z |
Electrical characterization of arsenic-ion-implanted semi-insulating GaAs by current-voltage measurement
|
Lin, G.-R.;Chen, W.-C.;Chang, C.-S.;Pan, C.-L.; Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Pan, C.-L.; GONG-RU LIN |
| 臺大學術典藏 |
2020-06-11T06:38:11Z |
Electrical characterization of arsenic-ion-implanted semi-insulating GaAs by current-voltage measurement
|
Lin, G.-R.;Chen, W.-C.;Chang, C.-S.;Pan, C.-L.; Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Pan, C.-L.; GONG-RU LIN |
| 國立交通大學 |
2014-12-08T15:03:39Z |
ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT
|
LIN, GR; CHEN, WC; CHANG, CS; PAN, CL |
| 國立交通大學 |
2014-12-08T15:12:24Z |
Electrical characterization of bathophenanthroline doped with dipotassium phthalate
|
Hsieh, Ming-Ta; Chang, Chan-Ching; Chen, Jenn-Fang; Ho, Meng-Huan; Chen, Teng-Ming; Chen, Chao-Jung; Chen, Chin H. |