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Showing items 445636-445645 of 2348570 (234857 Page(s) Totally)
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| 國家衛生研究院 |
2018-07 |
GATA3 mutation of luminal-type breast cancer patients in Taiwan
|
Tsai, SF |
| 國立交通大學 |
2014-12-08T15:04:43Z |
GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
|
CHEN, MJ; CHAO, KC; HUANG, TH; TSAUR, JM |
| 臺大學術典藏 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣海洋大學 |
2016 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Shih-Liang Chao;Ya-Lan Lin |
| 國立臺灣海洋大學 |
2017 |
Gate automation system evaluation: A case of a container number recognition system in port terminals
|
Ya-Lan Lin;Shih-Liang Chao |
| 國立臺灣大學 |
2006 |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D Simulation
|
Lin, Yu-Sheng; Lin, Chia-Hong; Kuo, J.B.; Su, Ke-Wei |
| 臺大學術典藏 |
2018-09-10T06:02:15Z |
Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation
|
Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO |
| 國立交通大學 |
2014-12-16T06:15:47Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuan; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-16T06:16:01Z |
Gate controlled field emission triode and process for fabricating the same
|
Tseng, Tseung-Yuen; Lee, Chia-Ying; Li, Seu-Yi; Lin, Pang |
Showing items 445636-445645 of 2348570 (234857 Page(s) Totally)
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