| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 國立成功大學 |
2012-10 |
Electrical characteristics analysis of various cancer cells using a microfluidic device based on single-cell impedance measurement
|
Hong, Jhih-Lin; Lan, Kung-Chieh; Jang, Ling-Sheng |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
|
Chen, SH; Chen, SL; Tsai, MH; Shyu, JJ; Chen, CF |
| 國立交通大學 |
2014-12-08T15:02:01Z |
Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures
|
Chen, JF; Chen, NC; Wang, PY; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
|
Shieh, MS; Sang, JY; Chen, CY; Wang, SD; Lei, TF |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
|
Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 國立交通大學 |
2014-12-08T15:08:18Z |
Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors
|
Cheng, Hui-Wen; Li, Yiming |
| 國立中山大學 |
2005 |
Electrical characteristics improvement of oxygen annealed MOCVD-TiO2 films
|
Ming-Kwei Lee; Jung-Jie Huang; Tsung-Shun Wu |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Electrical characteristics of (Pb,Sr)TiO3 positive temperature coefficient ceramics
|
Lu, YY; Tseng, TY |
| 國立臺灣海洋大學 |
1995-02 |
Electrical Characteristics of (Sr 0.2 Ba 0.8 )TiO 3 Positive Temperature Coefficient of Resistivity Materials Prepared by Microwave Sintering
|
Horng‐Yi Chang;Kuo‐Shung Liu;I‐Nan Lin |
| 國立東華大學 |
2005-08 |
Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor
|
Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H. |
| 國立聯合大學 |
2004 |
Electrical Characteristics of a Piezoelectric Vibrator in Open-Circuit Transient State
|
Kuo-Tsi Chang(張國財) |
| 國立交通大學 |
2014-12-08T15:04:26Z |
ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
|
WU, SL; LEE, CL; LEI, TF |
| 亞洲大學 |
2003-10 |
Electrical Characteristics of a-SiGe:H Thin-Film Transistors with Sb/Al Binary Alloy Schottky Source/Drain Contact
|
Cha-Shin Lin; Rong-Hwei Yeh; Inn-Xin Li; Jyh-Wong Hong |
| 國立臺灣大學 |
1986 |
Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor
|
胡振國; Hwu, Jenn-Gwo |
| 大葉大學 |
2015-07-16 |
Electrical characteristics of Al2O3 on p-type silicon substrate by liquid phase deposition
|
Huang, Jung-Jie;Lin, Pin-Cheng;Chen, Yung-Chin;Chen, Chao-Nan;Wuu, Dong-Sing;Lin, Che-Chun |
| 東海大學 |
2009 |
Electrical characteristics of Al2O3/ TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4)2SX treatments
|
Lee, K.-T., Huang, C.-F., Gong, J., Liou, B.-H. |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 東海大學 |
2009 |
Electrical Characteristics of Al2O3/TiO2 Nanolaminate Dielectrics on GaN
|
龔 正 |
| 東海大學 |
2009 |
Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments
|
Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2019-04-02T06:00:46Z |
Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
|
Lee, Yih-Shing; Yen, Tung-Wei; Lin, Cheng-I; Lin, Horng-Chih; Yeh, Yun |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure
|
Chang, Tzu-Yueh; Cheng, You-Wei; Lee, Po-Tsung |
| 國立交通大學 |
2019-04-02T05:58:55Z |
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure
|
Chang, Tzu-Yueh; Cheng, You-Wei; Lee, Po-Tsung |
| 東方設計學院 |
2008-08 |
Electrical Characteristics of Bi1Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
陳開煌; Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; (東方技術學院電子與資訊系) |
| 東方設計學院 |
2009 |
Electrical Characteristics of Bi4Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices
|
Chen, Kai-Huang; Diao, Chien-Chen; Yang, Cheng-Fu; Wang, Bing-Xun; 陳開煌; (東方技術學院電子與資訊系) |
| 國立交通大學 |
2014-12-08T15:49:20Z |
Electrical characteristics of CO2-sensitive diode based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立交通大學 |
2014-12-08T15:05:16Z |
ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS
|
WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG |
| 國立彰化師範大學 |
1991-04 |
Electrical Characteristics of Double-barrier Resonant Tunneling Structures with Different Electrode Doping Concentrations
|
Wu, Jenq-Shinn; Chang, C. Y. ; Lee, C. P. ; Chang, K. H. ; Liu, D. G. |
| 國立交通大學 |
2017-04-21T06:48:37Z |
Electrical Characteristics of Flexible Organic Thin-film Transistors under Bending Conditions
|
Chen, Fang-Chung; Chen, Tzung-Da |
| 國立中山大學 |
2007-05 |
Electrical characteristics of fluorine passivated MOCVD-TiO2 film on (NH4)2Sx treated GaAs
|
M.K. Lee;C.F. Yen;T.H. Shih;C.L. Ho;H.C. Lee;H.F. Tu;C.H. Fan |
| 國立交通大學 |
2014-12-08T15:40:11Z |
Electrical characteristics of glucose-sensitive diode arrays based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
|
Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
|
Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Yeh, Chi-Ruei; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
|
Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立聯合大學 |
2004 |
Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2
|
胡振國, C.H. Chang, L.S. Lee, M.J. Tsai and J.G. Hwu |
| 國立交通大學 |
2019-04-03T06:38:47Z |
Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
|
Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立中山大學 |
2006 |
Electrical Characteristics of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang |
| 國立中山大學 |
2007 |
Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate
|
Ming-Kwei Lee; Jung-Jie Huang; Chih-Feng Yen |
| 國立交通大學 |
2014-12-08T15:40:32Z |
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
|
Chang, KM; Yang, WC; Tsai, CP |
| 國立中山大學 |
2005-11 |
Electrical Characteristics of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee;Chih-Feng Yen;Jung-Jie Huang |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:36:18Z |
Electrical characteristics of Ni Ohmic contact on n-type GeSn
|
Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W. |
| 國立交通大學 |
2014-12-08T15:45:55Z |
Electrical characteristics of polyoxide prepared by N-2 preannealing
|
Chang, KM; Lee, TC; Wang, JY |
| 國立中山大學 |
2006 |
Electrical characteristics of postmetallization-annealed MOCVD-TiO2 films on ammonium sulfide-treated GaAs
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang; Shi-Hao Lin |
| 國立中山大學 |
2007 |
Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
|
Ming-Kwei Lee; Hung-Chang Lee; Zhen-Hui Lee |
