| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2019-05-02T00:25:47Z |
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
|
Shrestha, Niraj Man; Li, Yiming; Suemitsu, Tetsuya; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
|
Huang, Cheng-Hao; Li, Yiming |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 國立成功大學 |
2012-10 |
Electrical characteristics analysis of various cancer cells using a microfluidic device based on single-cell impedance measurement
|
Hong, Jhih-Lin; Lan, Kung-Chieh; Jang, Ling-Sheng |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
|
Chen, SH; Chen, SL; Tsai, MH; Shyu, JJ; Chen, CF |
| 國立交通大學 |
2014-12-08T15:02:01Z |
Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures
|
Chen, JF; Chen, NC; Wang, PY; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
|
Shieh, MS; Sang, JY; Chen, CY; Wang, SD; Lei, TF |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
|
Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 國立交通大學 |
2014-12-08T15:08:18Z |
Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors
|
Cheng, Hui-Wen; Li, Yiming |
| 國立中山大學 |
2005 |
Electrical characteristics improvement of oxygen annealed MOCVD-TiO2 films
|
Ming-Kwei Lee; Jung-Jie Huang; Tsung-Shun Wu |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Electrical characteristics of (Pb,Sr)TiO3 positive temperature coefficient ceramics
|
Lu, YY; Tseng, TY |
| 國立臺灣海洋大學 |
1995-02 |
Electrical Characteristics of (Sr 0.2 Ba 0.8 )TiO 3 Positive Temperature Coefficient of Resistivity Materials Prepared by Microwave Sintering
|
Horng‐Yi Chang;Kuo‐Shung Liu;I‐Nan Lin |
| 國立東華大學 |
2005-08 |
Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor
|
Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H. |
| 國立聯合大學 |
2004 |
Electrical Characteristics of a Piezoelectric Vibrator in Open-Circuit Transient State
|
Kuo-Tsi Chang(張國財) |
| 國立交通大學 |
2014-12-08T15:04:26Z |
ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE
|
WU, SL; LEE, CL; LEI, TF |
| 亞洲大學 |
2003-10 |
Electrical Characteristics of a-SiGe:H Thin-Film Transistors with Sb/Al Binary Alloy Schottky Source/Drain Contact
|
Cha-Shin Lin; Rong-Hwei Yeh; Inn-Xin Li; Jyh-Wong Hong |
| 國立臺灣大學 |
1986 |
Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor
|
胡振國; Hwu, Jenn-Gwo |
| 大葉大學 |
2015-07-16 |
Electrical characteristics of Al2O3 on p-type silicon substrate by liquid phase deposition
|
Huang, Jung-Jie;Lin, Pin-Cheng;Chen, Yung-Chin;Chen, Chao-Nan;Wuu, Dong-Sing;Lin, Che-Chun |
| 東海大學 |
2009 |
Electrical characteristics of Al2O3/ TiO2/Al2O3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4)2SX treatments
|
Lee, K.-T., Huang, C.-F., Gong, J., Liou, B.-H. |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 東海大學 |
2009 |
Electrical Characteristics of Al2O3/TiO2 Nanolaminate Dielectrics on GaN
|
龔 正 |
| 東海大學 |
2009 |
Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments
|
Ko-Tao Lee, Chih-Fang Huang, Jeng Gong, and Bo-Heng Liou |
